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Ab-initio study of electric field effect on black phosphorus
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Theory and Simulation of Materials Dr. Kapildeb Dolui National University of Singapore
Possible doping strategies in monolayer MoS2 2.87 eV CB 2.23 eV Exciton binding energy: 1.1 eV (mono layer), 0.11 eV (bulk) [2] 1.90 eV[1] CB 1.87 eV 1.80 eV CB CB CB [1] Phys. Rev. Lett. 105, 136805 (2010); [2] Phys. Rev. B 86, 241201 (R) (2012) VB VB LDA VB VB scGW VB Expt. HSE06 BSE Effect of substrate Effect of doping Formation energies MoS2 SiO2 Substitutional doping Absorption Impurity at the surface of substrate can change the conductivity of a monolayer MoS2 Nb substitution and alkaliatomabosortion are sutiable candidates as ptype and ntype dopant,respectively Kapildeb Dolui et al. Phys. Rev. B 87, 165402 (2013); Phys. Rev. B 88, 075420 (2013);
Tunable electronic structure of 2D materials Effect of transverse electric field on monolayer MoS2 nanoribbon The nanoribbon can be tuned by applying an external electric field. Semiconductor metal transition occurs at a critical field, decreases with the size of nanoribbon. bandgap of MoS2 to which Effect of perpendicular electric field on few layer black phosphorus The bandgap of few layer black phosphorus can be tuned by applying an external electric field. Semiconductor to metal transition occurs at a critical field, which decreases with the thickness of black phosphorus. Interestingly, beyond critical field the system becomes Dirac semimetal due to the anisotropic interaction bewteen the layers. Kapildeb Dolui et al. ACS Nano 6, 4823 (2012); Scientific Reports 5, 11699 (2015)
Dimensionality driven CDW phase in TiS2 Phonon bandstructure Lattice instability Criteria: gq = electronphonon coupling Uq = columb interaction Vq = exchnage interaction = elctronic bare suceptibility χq monolayer bulk Charge Density Wave (CDW): Electronic structure Atomic distortions we observe a Kohn anomaly in the bulk phonon dispersion. In contrast, a monolayer TiS2 exhibits a CDW instability at the M point in the Brillouin zone, resulting formation of 2×2 superstructure. in the Kapildeb Dolui et al. arXiv preprint arXiv:1310.1866
Renormalization of molecular electronic levels Molecule absorbed in metal interface Benzene at 2D hetrostructure Metal | spacer | molecule Graphite | BN | Benzene The DFTLDA gap of benzene molecule almost reamins same 5.0 eV for all the considered inteface calculations including many body effects (with in the G0W0 approximation) show that dynamical polarization renormalize molecular interface states. The effect of polarization is to reduce the gap between occupied and unoccupied molecular orbitals. Interestingly, 2D semiconducting spacer participate largely in screening and can be used to tune the molecule's gap. Quasiparticle (G0W0) HOMOLUMO gap caseses. Our 10.72 eV 8.61 eV 7.36eV effects 7.23eV Benzene@ BN Benzene Benzene@ BNGraphite Benzene@ Graphite Kapildeb Dolui et al. (manuscript in prepration)
Prediction of Dirac materials Example: Interorbital hopping term: We explore a new idea for the formation of bulk Dirac cones and Weyl orbital semimetals without the need of spin orbit coupling (SOC) or structural confinement. Weyl orbital semimetals can be constructed for various combinations of different orbitals, such as even and odd orbitals pair or bonding and antibonding states or pair of even or pair of odd orbitals or two different basis of same orbital, in variety of 3D lattice. Kapildeb Dolui et al. arXiv preprint arXiv:1412.2607
Transport in 2D materials Theory Our firstprinciples transport calculations are performed using the SMEAGOL code, which integrates nonequilibrium function method for electron transport with functional theory. Magnetoregistance the Green’s density Lead | Channel | Lead (Fe) (MoS2) (Fe) Experiment @ Fundan University, China T T = transmission We have dismostration a giant magnetoresistance (MR) effect in Fe/MoS2/Fe junctions. This a first demostration of magnetoregistance in 2D chalcogenides. Our prediction of magenetoregistnace is confirmed by the experimental measurements. Kapildeb Dolui et al. Phys. Rev. B 90, 041401(R) (2014); Nano Lett. 15, 5261(2015)