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Experimental. Experiment Basic: AlCl3 + acetylacetone Increased annealing time to 60 min - Lowered leakage current for TFT device - Lowered capacitance by hydroxyl decomposition - Alloying to improve performances. Precusor for alloying

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Presentation Transcript
slide1

Experimental

  • Experiment
  • Basic: AlCl3 + acetylacetone
  • Increased annealing time to 60 min
  • - Lowered leakage current for TFT device
  • - Lowered capacitance by hydroxyl decomposition
  • - Alloying to improve performances

Precusor for alloying

ZrCl4 | ZrOCl2 | HfCl4 | HfOCl2 | TEOS → precipitates

ZrO(NO3)2 | HfO(NO3)2 | YCl3→ did not precipitates

slide2

Experimental

Oxynitrate-based

ZrO(NO3)2 + AlCl3 + acetylacetone

Low proton conductivity

(Less residual hydroxyls at given annealing temperature)

AlCl3 - YCl3 precursor

Couldn’t obtain coating Y-rich samples

(High decomposition temperature of YCl3)

Capacitance: Al(Al+Y) - 0.5 > 0.7 > 0.8 > others

slide3

Experimental

Leakage current

ZrO(NO3)2 + AlCl3 + acetylacetone

Al(Al+Y) – 0.8~1 showed appropriate leakage current

Y-rich samples – did not insulate

TFT device

In2O3 – based TFT device

10-9 –level leakage current

slide4

Experimental

Acetylacetone - dependency

Y - dependency

Future works

XPS – for hydroxyl (capacitance) and oxygen vacancy (leakage current)

Ellipsometry – porosity (acetylacetone vs. n/a)

Organic TFT device characterization – off current, hysteresis