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6. Effective Protection of GaN-based LEDs

BOB SBS TGS. HBM. IEC61000-4-2 : HBM + CDM. Strong Transient Voltage (ESD, Surge, EFT). Zener Diode for LEDs. Forward. Weak Clamped Voltage. MM. IEC61000-4-4 : EFT. Bypass Excess Current. Circuit /Device to protect. 1. Basic Functions of Zener Diode. Tunneling.

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6. Effective Protection of GaN-based LEDs

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  1. BOB SBS TGS HBM IEC61000-4-2 : HBM + CDM Strong Transient Voltage (ESD, Surge, EFT) ZenerDiode for LEDs Forward Weak Clamped Voltage MM IEC61000-4-4 : EFT Bypass Excess Current Circuit /Device to protect 1. Basic Functions of Zener Diode Tunneling IEC61000-4-5 : Lightning Surge CDM VC <~ 20 V Reverse VP ~ ±8 kV Fabrication : 26 % Dead & Degraded LEDs by ESD Strike ESD/EOS : 38 % Key Device Parameters Zener breakdown - Tunneling probability(Θ) - Tunneling current(Jn) Jn=qvRn Θ vR: Richardson velocity • Zener voltage (Vz ) • Leakage current (Ileak @ -4 V) • ESD strength (> ±8 kV) • Current drivability (>100 mA) • Temperature coefficient (ΔVz/ΔT < a few mV/K) Assembly : 14 % Unknown: 15 % Good : 4 % Mobile Ion : 3 % GaNEpi Structure ESD damaged LEDs ESD Endurance Vz Rz General Connection of Zener Diode with LED chip Single Chip Dual Pad Series Connection (Cathode to cathode) Single Chip Dual Pad Series Connection (Anode to Anode) 4. Configuration for LED Protection 2. ESD/EOS Models and Standards 5. Zener Diode Thermal & ESD Stability ESD Protecting Diode Light emitting chip LED LED LED LED Zener Zener Zener Zener Single Chip Dual Pad Parallel Connection 3. GaN-based LEDs need ESD/EOS Protection 6. Effective Protection of GaN-based LEDs Ileak Various Applications

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