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Dive into a talk from the SPIE Regional Meeting, discussing the radiative efficiency of InGaAs materials. Explore motivations for improving LED and laser diode performance, experimental techniques, efficiency measurements, defects like Auger, and conclusions regarding recombination and lattice mismatch.
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A talk given at the SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging (2000) Radiative efficiency of light-emitting materials Tim Gfroerer Davidson College, Davidson, NC - Funded by Research Corporation and the Petroleum Research Fund
Outline • Motivation • Experimental technique • Material system: InGaAs • Conclusion
Motivation light-emitting diodes laser diodes • light is good! • heat is bad!
Motivation (continued) internal reflection scattering refraction reabsorption collection efficiency = ?
Measuring the efficiency efficiency = light in / light out DT a heat heat light in signal a light out light in =heat+ light out
Experimental set-up - heat light in light out
Efficiency calibration excitation g light + heat increasing excitation
Calibrated efficiency light defects Auger
Nonradiative mechanisms defects: Auger:
GaInAs bandgap GaAs InP substrate Ga0.5 In0.5 As InAs
Lattice mismatch misfit dislocations and strain
Auger activation energy Conduction band smaller bandgap: smaller Ea Ea momentum Valence band
Conclusions • New radiative efficiency measurement technique • Material system: InGaAs • Recombination and Lattice mismatch