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Informação Geral sobre o Simulador HSPICE

Informação Geral sobre o Simulador HSPICE. Disciplina de Eletrônica Digital – ECA (4453F-02) Prof. Dr. Fabian Vargas. Netlist SPICE. vista 3D e layout. Dreno. Gate. Source. Gate. Dreno. Source. N +. W. N +. L. Substrato P -. SiO 2. Netlist SPICE.

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Informação Geral sobre o Simulador HSPICE

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  1. Informação Geral sobre o Simulador HSPICE Disciplina de Eletrônica Digital – ECA (4453F-02) Prof. Dr. Fabian Vargas

  2. Netlist SPICE • vista 3D e layout Dreno Gate Source Gate Dreno Source N+ W N+ L Substrato P- SiO2

  3. Netlist SPICE • Parâmetros geométricos do dreno/source Gate Source Dreno W tox xj 1/2 Ld L

  4. Netlist SPICE • Capacitâncias do dreno/source Área Perímetro Gate a b

  5. Netlist SPICE • Capacitâncias do gate L CGDO CGSO W CGBO

  6. Exemplo (1) de Netlist Spice gate source * inversor .MODEL nmos nmos level=2 vto=.82 uo=690 ... .MODEL pmos pmos level=2 vto=-1.4 uo=231 ... M1 o1 i vdd vdd pmos l=1e-06 w=2e-06 M2 o1 i 0 0 nmos l=1e-06 w=2e-06 vcc vdd 0 dc 5 vin1 i 0 pulse (0 5 0 0.1N 0.1N 10N 20N) .tran 0.5N 80N *.dc vin1 0 5 .options post nomod nopage .print tran v(i) v(o1) C1 o1 0 100fF .END drain vdd M1 Fall-Time bulk Time-High o1 i Vmax Rise-Time delay Vmin M2 Period vin1

  7. Exemplo (2) de Netlist Spice 0 3.3 3.3 0

  8. Netlist Spice – Modelos dos transistores .MODEL nmos nmos level=2 vto=.82 gamma=.76 +tox=2e-08 nsub=2.5e+16 xj=2.5e-07 +ld=1.25e-07 uo=690 ucrit=35000 uexp=0.35 +vmax=70800 cj=350u cjsw=450p cgdo=310p +cgso=310p .MODEL pmos pmos level=2 vto=-1.4 gamma=.76 +tox=2e-08 nsub=2.5e+16 xj=4.5e-07 +ld=4.7e-08 uo=231 ucrit=71000 uexp=.35 +vmax=320000 cj=540u cjsw=760p cgdo=300p +cgso=300p

  9. Netlist Spice – Modelos dos transistores • .MODEL nmosM1modelo NMOS designado como M1 • level=2 nível de modelagem • vto=.82 tensão de threshold (V) • gamma=.76 threshold do substrato (V0.5) • tox=2e-08 espessura do óxido (m) • nsub=2.5e+16 dopagem do dreno/source (1/cm3) • xj=2.5e-07 profundidade do canal (m) • ld=1.25e-07 tolerância na largura do canal (m) • uo=690 mobilidade do portadores (cm2/V.s) • ucrit=35000 uexp=0.35 vmax=70800 limite do campo elétrico • cj=350u cjsw=450p cgdo=310p cgso=310p capas. transistor

  10. Netlist Spice – Modelos dos transistores • Comparação entre diferentes tecnologias

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