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Explore the energy bands in solids, Fermi energy, semiconductor characteristics, and photocathode quantum efficiency in photoemission detectors. Learn about photomultiplier tubes, materials, band models, secondary electron emission, and the dynamics of electron scattering. Understand the limitations and characteristics of photomultiplier and microchannel-plate photomultiplier detectors in timing measurements with high gain, spatial resolution, and fast response.
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Materials Considerations in Photoemission Detectors S W McKnight C A DiMarzio
Energy Bands in Solids Energy Forbidden electron energies (Energy Gap) Eg2 Allowed electron energies (Energy Band) Eg1
Energy Bands and Gaps • Metals, insulators, and semiconductors all have energy bands and gaps • Difference is due to electron filling of bands • Metals: highest band with electrons in it is part-filled. • Insulators: highest band with electron in it is completely filled. (Filled band carries no net current.)
Electron Fermi Energy • Pauli Exclusion Principle (“fermions”): each electron state can be occupied by no more than one electron per spin state • Fermi Energy (Ef) separates occupied states from unoccupied states at T=0K • Ef is halfway between highest filled state and lowest empty state
Metal/Insulator Band Structure Energy Ef Ef Metal Insulator
Semiconductor Band Structure Ef Ef Ef Eg electrons “holes” Extrinsic Semiconductor (n-type) Extrinsic Semiconductor (p-type) Intrinsic Semiconductor (Eg≤ ~100 kT)
Surface Energies Vacuum Level (Evac) Ea Ec Vacuum Level (Evac) Фo Ef Ea = electron affinity = Evac - Ec Фo= work function = Evac - Ef Metal Insulator
Photomultiplier Tubes • Vacuum photoemissive device • Window • End-on, side-looking • Photocathode • Insulator/semiconductor materials (better η than metals) • Spectral response from UV to Near IR • Moderate quantum efficiency (< 0.3) • Dynode chain • Gain ~106 through secondary electron emission
Photocathode • Quantum efficiency (ηq) • ηq= (# emitted photoelectrons/# of incident photons) • Photon absorbed • Photoelectron created • Photoelectron escapes surface • Wavelength limits • hν > Eg + Ea • UV tubes: CsI, CsTe “solar blind” (<300-200 nm) • IR tubes: multi-alkali materials (Sb-Na-K-Cs)
Photocathode Quantum Efficiency η = PA Pν Pt Ps PA = Probability that photon will be absorbed by material = (1-R) Pν = Probability that light absorption will excite electron above vacuum level Pt = Probability that electron will reach surface PS = Probability that electron reaching surface will be released into vacuum
Probability of absorption between x and x+dx and electron escaping to surface = P(x) = k e-kx dx e-x/L P(x) = k e –(kx + x/L) dx Total probability of absorption and electron escaping to surface = P(x1) + P(x2) + P(x3) + …
Photocathode Quantum Efficiency Pν = Probability that light absorption will excite electron above vacuum level PS = Probability that electron reaching surface will be released into vacuum R= Surface reflectivity k= photon absorption coefficient L= mean escape length of electrons
Photocathode Materials • Cs-Te: UV “solar blind” • Sb-Cs: UV-Vis • Bialkali (Sb-Rb-Cs, Sb-K-Cs): UV-Vis • Multialkali (Sb-Na-K-Cs): UV-IR • Ag-O-Cs: Vis-IR • GaAs(Cs), InGaAs(Cs): UV-IR
Bialkali Cs-Te Sb-Cs
Dynode Chain • Amplification of photoelectrons by secondary electron emission • δ = (# of secondary electrons) / (# of primary electrons) • Gain: G~(δ)n (for n-stage dynode chain)
Secondary Electron Emission E Primary Electron Collision Process x Secondary Electrons Ea Vacuum Level Ec Eg Electron-Hole Pairs Valence Band Surface Insulator/Semiconductor
Secondary Electron Emission • Primary electron loses energy to electrons in solid • Metals: electron-electron interactions • Insulators: electron-hole creation • Penetration depth proportional to primary electron energy • Secondary electrons travel to surface • Electron-electron or electron-phonon collisions reduce energy and facilitate recombination • Greater chance of collision if created deeper • More electron-electron collisions in metals than insulators • Secondary electrons emitted into vacuum • Requires kinetic energy > electron affinity (Ea) • Secondary emission coefficient (σ) = (# of secondaries)/ (number of primaries)
Electron-Electron Scattering Vacuum Level (Evac) Vacuum Level (Evac) Ea Ec Фo Ef Electrons Ea = electron affinity = Evac - Ec Фo= work function = Evac - Ef Holes Metal Insulator Many final states available Few final states available
Secondary Emission Coefficients From Handbook of Physics and Chemistry
MCP-PMT • High gain/compact size • 2D detection with high spatial resolution • Fast time response • Stable in high magnetic fields • Low power consumption and light weight
Photomultiplier Limitations • Dark current • Drift • Response time • Saturation: space charge limit • Tube damage at high illumination (anode current limit)
Anode/Cathode Sensitivity • Radiant Sensitivity: photocurrent per incident radiant flux at given wavelength (A/W) • Luminous Sensitivity: photocurrent per incident luminous flux from tungsten lamp at 2856K (A/lm)