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Memory device. Introduction. Random-Access Memory (RAM) Sequential-Access Memory (SAM) Read/Write Memory (RWM) Read-Only Memory Static Memory Device Dynamic Memory Device Internal Memory Mass Memory. Memory Cell Memory Word Byte Capacity Address Read Operation Write Operation

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Memory device


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    1. Memorydevice Introduction • Random-Access Memory (RAM) • Sequential-Access Memory (SAM) • Read/Write Memory (RWM) • Read-Only Memory • Static Memory Device • Dynamic Memory Device • Internal Memory • Mass Memory • Memory Cell • Memory Word • Byte • Capacity • Address • Read Operation • Write Operation • Access Time • Volatile Memory wnopp 2000

    2. General Memory Operation • Select the address. • Select R/W operation. • Supply the input to be store (W operation). • Hold the output data comings from memory (R operation). • Enable (or Disable) the memory Example Memory chip 2K x 8. How many total bits can chip store? 2K = 1 x 1024 = 2048 words 1 word = 8 bits 2K x 8 = 2048 x 8 = 16384 bits Which memory store the most bits: 5M x 8, 1M x 16 5M x 8 = 5 x 1,048,576 x 8 = 4,1943,040 bits 1M x 16 = 1,048,576 x 16 = 1,677,7216 bits wnopp 2000

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    4. CPU- Memory connections Write operation 1. CPU ๐Binary address on address bus. 2. CPU ๐Data on data bus. 3. CPU ๐control signal. 4. ICs decode address location. 5. Transfer data to the selected location. Read operation 1. CPU ๐Binary address on address bus. 2. CPU ๐control signal. 3. ICs decode address location. 4. Place data ๐ data bus ๐ Transfer data to CPU wnopp 2000

    5. Read-Only Memory wnopp 2000

    6. ROM architecture wnopp 2000

    7. ROM timing read operation PROMs fusible links wnopp 2000

    8. Structure of a bipolar MROM(Mask-Programmed ) wnopp 2000

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    10. Example of a programmable logic device wnopp 2000

    11. PROM architecture for PLDs wnopp 2000

    12. PAL architecture wnopp 2000

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    14. Symbol & mode table for 6264 SRAM Cell arangement in 16Kx1 DRAM Symbolic representation of DRAM wnopp 2000

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