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Explore subatomic structure resolution via synchrotron X-ray diffraction at APS and electron microscopy at BNL. Achieve atomic layer precision in synthesis to study correlation between structure and electronic properties. Data is crucial for designing ferroelectric field-effect transistors.
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CRISP – National Laboratory CollaborationsAdvanced Photon Source & Brookhaven National Laboratory Reciprocal Space Imaging (APS) Real Space Imaging (BNL) DataPolarized STO model 100 10 1 0.1 0.001 • Subatomic resolution of structure from synchrotron x-ray diffraction at APS and electron microscopy at BNL • Atomic layer precision in synthesis • Correlationbetween structure and electronic properties with understanding from first principles • Data critical for design of ferroelectric field effect transistors Polarization model from XRD x-ray intensity 1 2 3 4 5 Reciprocal space units Ti O Sr Si D. Kumah, J. Reiner, Y. Segal, A. Kolpak, S. Ismail-Beigi, Z . Zhang, P. Zschack, D. Su, Y. Zhu, M. Sawicki, C. Broadbridge, F.J. Walker, C.H. Ahn