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鑽石計畫維基夥伴獎學金第一學期成果報告書

鑽石計畫維基夥伴獎學金第一學期成果報告書. 學生 : 范承翰 9811052 指導學長 : 張耀仁學長 指導教授 : 陳冠能教授. Core Value of 3D intergration. Small form factor High performance High throughput Low power consumption Hetero-integration. Short wiring. Cu/Sn BCB Hybrid Bonding. Cu/Sn micro-bump Hybrid bonding technology

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鑽石計畫維基夥伴獎學金第一學期成果報告書

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  1. 鑽石計畫維基夥伴獎學金第一學期成果報告書 學生:范承翰9811052 指導學長:張耀仁學長 指導教授:陳冠能教授

  2. Core Value of 3D intergration • Small form factor • High performance • High throughput • Low power consumption • Hetero-integration Short wiring

  3. Cu/Sn BCB Hybrid Bonding • Cu/Sn micro-bump • Hybrid bonding technology • TSV aspect ratio≧8 • Carrier-less, no handling issue • Process simplification • Cost reduction Pros • 250 ℃ low temperature bonding • Bonding strength reinforcement • Reliability improvement • Hermetic seal • Inner device protection Trough Silicon Via (TSV) integration case 1.No interface exists at BCB-BCB bonding surface 2.Thickness control of Sn → no Kirkendall voids

  4. 1.因為有rds (is associated with the slope)影響造成一開始的曲線不為線性。 2.發現電壓漸漸變大時，因為gm變大，1/gm變小，以至於電壓到達約5V時趨近於線性。 TSV leakage

  5. 1.結果與預測的C-V圖不盡理想，發現低頻的的半導體空乏層電容兩邊並不是平滑且沒有依照正電壓持續增加，空乏區變寬，如同半導體表面的介電質串聯絕緣體，總電流減少。1.結果與預測的C-V圖不盡理想，發現低頻的的半導體空乏層電容兩邊並不是平滑且沒有依照正電壓持續增加，空乏區變寬，如同半導體表面的介電質串聯絕緣體，總電流減少。 2.當電子反轉層在表面形成，電容雖然增加但是卻又衰減並沒有趨向平滑，或許是因為表面有些許defect也有可能是測量儀器在calibration時沒有用乾淨。 3.右圖可以看到不論是高頻或低頻我們都可以看出對稱性，因為是電容串聯的特性(一邊有Cinv另一邊是Cacc所做的串聯，所以兩邊應該會對稱)。 Kelvin structure electrical characterization 直徑5um且深度為40um的tsv，藉由不同的頻率(1M,500K,300K,100K,10K) 去量測出tsv capacitance(Y)-tsv voltage(X)的關係圖

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