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Simulation of Heavily Irradiated Silicon Pixel Sensors - Double Junction model(DJ). Zhou Xing & Marina Artuso. Main Content.

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simulation of heavily irradiated silicon pixel sensors double junction model dj

Simulation of Heavily Irradiated Silicon Pixel Sensors- Double Junction model(DJ)

Zhou Xing & Marina Artuso

main content
Main Content
  • Goal : reproduce & verify DJ simulation results presented in V.Chiochia, et al. IEEE Trans. Nucl. Sci. 52-4(2005) 1067-1075, e-print: arXiv:physics/0411143 (CMS pixel sensor design)
  • Outline
    • Electric field map across the sensor
      • Double PN junction -> Double peak field
      • Fluence, bias and temperature dependence
    • Charge collection profile with a grazing angle

heavy ion track(heavy ion model:dE/dX=80 e/um

)

      • High-z tail caused by high field at the backside of sensor

Double Peak Field instead of linearly varying field after irradiation

charge collection measurements provide a sensitive determination of the electric field within the detectors

comparison between linear field and double peak field
Comparison between linear field and double peak field

Radiation induced traps

After irradiation standard picture is no longer true

Standard picture(linear field)

Double peak field

  • Constant type-inverted effective doping density(space charge is uniformly distributed)
  • Electric fields vary linearly in depth reaching a maximum value at the p-n junction.
  • Use varying space charge density to characterize the irradiation effects
  • High field at both front(n+) and back side(p+) of the sensor
introduce radiation induced traps
Introduce radiation induced traps

Two defect levels in the silicon band gap with opposite charge states(A/D)

  • Effective space charge density
  • Best fit
  • electric field map generated by TCAD was input to PIXELAV simulation program(CMS) ;
  • Agreement between measured and simulated charge collection profiles was judged subjectively

Tuning procedure:

6 free parameters in this model

investigate the field
Investigate THE field

Sensor configuration : n+/n/p+

2D reproduced result

  • 1Mev Neutron equivalent fluence of per year
  • Bias dependence
  • 2D test structure, slice at the middle of readout electrode
investigate the field1
Investigate THE field

2D reproduced result

Higher fluence

investigate the field2
Investigate THE field

2D reproduced result

  • Temperature dependence
charge collection profiles
Charge Collection Profiles

TCAD Heavy Ion model : only one track; try to observe the “tail”

2D reproduced result

N+ electrode

2-D simulation setup

10 readout electrodes

P-spray isolation

p+ backside

Experiment setup

slide9

Conclusion:

  • Doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors.
  • Field generated by TCAD based on DJ model could be utilized in our pixel detector simulation