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Structural, Electronic, and Magnetic Properties of In1-xMnxSb Semiconductor Films

This research explores the development of magnetic semiconductor thin films for spin electronic device applications. By increasing Mn concentration in InMnSb, high Curie temperatures exceeding 400 K have been achieved. Structural characterization via TEM reveals phase separation, with MnSb and MnAsSb compounds observed as ferromagnetic phases. Magnetization measurements confirm ferromagnetism above room temperature. The project aims to understand the role of InMnSb host matrix in stabilizing high-temperature ferromagnetism. Graduate students mentor undergraduates in this STEM program to study the electrical properties of InMnSb films across various Mn concentrations, showing potential as a multifunctional material. Undergraduate student Stefany Holguin contributes to carrier lifetime experiments in InMnSb alloys.

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Structural, Electronic, and Magnetic Properties of In1-xMnxSb Semiconductor Films

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  1. Structural, electronic and magnetic properties of In1-xMnxSb semiconductor films Bruce W. Wessels, Northwestern University, DMR 0804479 Magnetic semiconductor thin films are being developed for spin electronic device applications. For most applications materials with a Curie temperature in excess of 300 K. are required. By increasing the Mn concentration in InMnSb we demonstrated alloys with Tc in excess of 400 K. Structural characterization and chemical analysis by transmission electron microscopy (TEM) indicated the high Mn content alloys are two phase with secondary MnSb as the primary second phase. The compound MnAsSb is observed at the interface. Both compounds are ferromagnetic. Magnetization measurements indicate that the films are ferromagnetic above room temperature. The role of the InMnSb host matrix in stabilizing the high temperature ferromagnetism is under study. LEFT) Bright field TEM image showing the phase separation (dashed arrow) at the substrate/ film interface and within the film (solid arrows). Microscopy was carried out in collaboration with V. Lazarov of York University, England. RIGHT) Temperature dependence of saturation magnetization for multi-phase In0.78Mn0.22Sb. Inset plot: Saturation magnetization at 5 K versus Mn concentration.

  2. Structural, electronic and magnetic properties of In1-xMnxSb semiconductor filmsBruce W. Wessels, Northwestern University, DMR 0804479 Graduate students mentoring undergraduates during the summer research STEM program provides a mutually beneficial teaching and learning environment for young scientists. The aim of this project is to determine electrical properties of InMnSb magnetic semiconductor films over a wide range of Mn concentration. Systematic analyses of carrier concentration, mobility, resistivity, and carrier lifetime measurements indicate these multi-phase films have excellent semiconducting properties in addition to their excellent magnetic properties. This material shows promise as a next generation multifunctional material Undergraduate student Stefany Holguin sets up a carrier lifetime experiment for InMnSb alloys as part of a DMR sponsored REU project.

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