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As early as the 1950s, the semiconducting properties of a range of crystalline and amorphous chalcogenide alloys were investigated. In the early 1960s, new reversible phase change materials and electrically and optically programmable devices were reported, and these devices were proposed for use in
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1. Nonvolatile, High Density, High Performance Phase Change Memory Guy Wicker1, Scott Tyson2, Tyler Lowrey1, Stephen Hudgens1, Robert Pugh3, Ken Hunt3 1 Ovonyx, Inc., 1675 W. Maple Rd, Troy, MI 480842 Mission Research Corp., 5001 Indian School Rd NE, Albuquerque, NM 871103 Air Force Research Laboratory, 3550 Aberdeen SE, Kirtland AFB, NM 87117