Production of 3D silicon pixel sensors at FBK for the ATLAS IBL. Alvise Bagolini a , Maurizio Boscardin a , Gian -Franco Dalla Betta b , Gabriele Giacomini a , Francesca Mattedi a , Marco Povoli b , Nicola Zorzi a. a Fondazione Bruno Kessler (FBK-CMM) Italy
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Alvise Bagolinia, Maurizio Boscardin a,
Gian-Franco Dalla Bettab, Gabriele Giacominia,
Francesca Mattedia, Marco Povolib, Nicola Zorzia
a Fondazione Bruno Kessler (FBK-CMM) Italy
3D_DDTC with passing-through
columns technology was used for the first production oriented to the ATLAS insertable B-Layer
FE-I4 sensor 80 x 336 pixels
dead area of 200 mm
≈ 11 µm
≈ 12 µm
≈ 234 µm
≈ 5 µm
≈ 10 µm
Etch stop for DRIE etching
Mechanical yield with the optimized edge protection:
Edge protection effects on the wafer bowing.
A high bowing induces
Old edge protection wafers warp up to 120 µm
Optimizededgeprotection waferswarp< 30 µm
The wafer bowing strongly influences the leakage current.
With the optimized edge protection it is reduced of one order of magnitude.
Leakage current on planar test diodes (4mm2)
Old edge protection
Optimized edge protection
old edge protection
misalignmentof a several μm
optimized edge protection layer
Misalignment < 5μm
336 pixels ( 2 electrodes per pixel)
The IV characteristics of 80 strips of two sensors
The IV characteristics of FE-I4 pixel sensor as a sum of 80 IV strips curves
Good uniformity from batch to batch related to the 80 strips of each detector
4 production batches
Selected wafers at least 3 FE-I4 sensors qualified
Litho n+ on junction side
Problem with resist adhesion
Low final yield
FBK hasdeveloped and optimized the technologyused for the production of Si-3D pixel sensors for the ATLAS IBL with a relativelygoodyield.
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