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SIMS: Secondary Ion Mass Spectroscopy

SIMS: Secondary Ion Mass Spectroscopy. Principle. Ion source O2+, Cs+. V=6KV. DeltaV =5KV. Ion gun. Magnetic Arm. V=5KV. Secondary Chamber (sample loading). W ire Chamber. Primary Chamber (target). The beam is scanning (and escavating ) the sample. 200-250 um.

gloria-todd
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SIMS: Secondary Ion Mass Spectroscopy

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  1. SIMS: Secondary Ion Mass Spectroscopy Principle Ion source O2+, Cs+ V=6KV DeltaV=5KV Ion gun Magnetic Arm V=5KV Secondary Chamber (sample loading) Wire Chamber Primary Chamber (target)

  2. The beam is scanning (and escavating) the sample 200-250 um Restricted region analyzed (to avoid scattering from walls) 0.5-2 um Measured with AFM

  3. Readout is switched between Si, Al, B/P for every point. Counts (log scale) Si (bulk), constant B or P,As, decreasing as a functionof time (depth) t Si (bulk), constant B or P,As (implant), constant NIST control sample (B or P implant with constant density in silicon bulk) time converted to depth by usingthe AFM measurement t

  4. Still waiting for n-in-n results... n-in-p: pixel implant n+ window (pixel): 3 points for each of the two samples

  5. moderated p-spray

  6. non-moderated p-spray

  7. back contact

  8. Still waiting for final n-in-n numbers Reasonable values for pixel and high-low pspray Something strange in the back metal (at least for the measurements done while Iwas here) Contamination from the wet etching?

  9. Next PPS meetings 1) Mini PPS meeting (phone): 13 Dec 4pm - short, 1-2 hours just summary of activities 2) PPS General meeting (CERN): Feb 15th (?) - 1 day with possible overspill to 16th 3) PPS General meeting: Liverpool End May/ Beg June (?) (attached to the RD50 workshop) For 1) we might want to provide some material For 2) and 3) we should prepare talks

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