Low Temperature ALD of SnO 2

1. Low Temperature ALD of SnO2 The purpose of the Low Temperature Atomic Layer Deposition of SnO2 Project is to fabricate highly pure, conductive and transparent SnO2 thin films at lower temperature than conventional ALD range (>200 oC). The combination of a newly synthesized Sn precursor, N2,N3-di-tert-butyl-butane-2,3-diamido-tin(II), and hydrogen peroxide enables the film growth at substrate temperature as low as 50 oC. This successful low temperature growth of conductive nanocrystalline SnO2 films by ALD allows it to be exploited in transparent electrodes for displays, organic light emitting diodes, solar cells, conductive and protective coatings on plastic, microchannel electron multiplier plates, or as a semiconductor layer in transparent transistors. Daniel C. Ralph, Cornell University, ECCS - 0335765 Cross-sectional SEM of holes with aspect ratio 50:1 coated by ALD SnO2. Cross-sectional high-resolution TEM image of the nanocrystalline SnO2 film. Jaeyeong Heo, Adam S. Hock, and Roy G. Gordon, Harvard University. Work performed at The Center for Nanoscale Systems (CNS) at the Harvard, a member of the NNIN. 1 um 200 nm