Accurate Physical Model for the Lateral IGBT in Silicon On Insulator Technology
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Accurate Physical Model for the Lateral IGBT in Silicon On Insulator Technology Ettore Napoli 1,2 , Vasantha Pathirana 1 , Florin Udrea 1,3 1 Dept. of Engineering, University of Cambridge, UK 2 Dept. Electronic and Telecom. Univ. of Napoli, Italy 3 Cambridge Semiconductor (CamSemi), UK.

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Accurate Physical Model for the Lateral IGBT in Silicon On Insulator Technology

Ettore Napoli1,2, Vasantha Pathirana1, Florin Udrea1,3

1 Dept. of Engineering, University of Cambridge, UK

2 Dept. Electronic and Telecom. Univ. of Napoli, Italy

3 Cambridge Semiconductor (CamSemi), UK

EU research program ROBUSPIC

ISIE, Dubrovnik, June 21st 2005


Outline
Outline Insulator Technology

  • Motivation

  • Thin SOI LIGBT

  • Differences with Vertical IGBT

  • Spice sub-circuit model for LIGBT

    • Model equations

  • Model behavior

  • Numerical results

  • Conclusion

ISIE, Dubrovnik, June 21st 2005


Motivation
Motivation Insulator Technology

  • Available IGBT circuit models are not suited to Lateral IGBT

  • Need for

    • a reliable physical based model for Lateral IGBT

    • usable in various circuit simulators

  • Extension to different LIGBT technologies

  • Important for smart power design

ISIE, Dubrovnik, June 21st 2005


Thin soi lateral igbt
Thin SOI Lateral IGBT Insulator Technology

  • 600V PT

  • Transparent buffer

  • Source and Drain up to the BOX

  • Current flow is horizontal and 1D

ISIE, Dubrovnik, June 21st 2005


Differences with vertical igbt 1
Differences with Vertical IGBT (1) Insulator Technology

  • Not zero carrier concentration at the collector edge for LIGBT

ISIE, Dubrovnik, June 21st 2005


Differences with vertical igbt 2
Differences with Vertical IGBT (2) Insulator Technology

  • Electrons injected from the n+ accumulation layer into the n- drift across the n+/n- junction.

  • The structure features double injection (similar to a PIN or a thyristor)

ISIE, Dubrovnik, June 21st 2005


Differences with vertical igbt 3
Differences with Vertical IGBT (3) Insulator Technology

  • Total charge and charge profile

    LIGBT

    Vertical IGBT

ISIE, Dubrovnik, June 21st 2005


Differences with vertical igbt 4
Differences with Vertical IGBT (4) Insulator Technology

  • Depletion width vs. reverse voltage is influenced by 2D effects

ISIE, Dubrovnik, June 21st 2005


Differences with vertical igbt 5
Differences with Vertical IGBT (5) Insulator Technology

  • Depletion width LIGBT vs. Vertical IGBT

  • 0V

ISIE, Dubrovnik, June 21st 2005


Differences with vertical igbt 51
Differences with Vertical IGBT (5) Insulator Technology

  • Depletion width LIGBT vs. Vertical IGBT

  • 5V

ISIE, Dubrovnik, June 21st 2005


Differences with vertical igbt 52
Differences with Vertical IGBT (5) Insulator Technology

  • Depletion width LIGBT vs. Vertical IGBT

  • 10V

ISIE, Dubrovnik, June 21st 2005


Differences with vertical igbt 53
Differences with Vertical IGBT (5) Insulator Technology

  • Depletion width LIGBT vs. Vertical IGBT

  • 100V

ISIE, Dubrovnik, June 21st 2005


Differences with vertical igbt 54
Differences with Vertical IGBT (5) Insulator Technology

  • Depletion width LIGBT vs. Vertical IGBT

  • 200V

ISIE, Dubrovnik, June 21st 2005


Differences with vertical igbt 55
Differences with Vertical IGBT (5) Insulator Technology

  • Depletion width LIGBT vs. Vertical IGBT

  • 300V

ISIE, Dubrovnik, June 21st 2005


Differences with vertical igbt 6
Differences with Vertical IGBT (6) Insulator Technology

  • Depletion region mobile charge effect

ISIE, Dubrovnik, June 21st 2005


Igbt models not suited for ligbt
IGBT models not suited for LIGBT Insulator Technology

  • Voltage rise at turn-off is faster due to lower charge in the epilayer and slower depletion width expansion

ISIE, Dubrovnik, June 21st 2005


Spice sub circuit model for ligbt
Spice sub-circuit model for LIGBT Insulator Technology

Currents and voltages Epilayer charge equation

ISIE, Dubrovnik, June 21st 2005


Spice sub circuit model for ligbt1
Spice sub-circuit model for LIGBT Insulator Technology

  • Vj : Emitter junction

  • Vdrift: Depends on the injected carriers

    • analytic solution

  • Vmos: Mosfet (level 1)

ISIE, Dubrovnik, June 21st 2005


Spice sub circuit model for ligbt2
Spice sub-circuit model for LIGBT Insulator Technology

  • IN(W) : Electron current through the level 1 Mosfet

ISIE, Dubrovnik, June 21st 2005


Spice sub circuit model for ligbt3
Spice sub-circuit model for LIGBT Insulator Technology

  • IP(W) : Bipolar hole current

ISIE, Dubrovnik, June 21st 2005


Spice sub circuit model for ligbt4
Spice sub-circuit model for LIGBT Insulator Technology

  • IN(0) : Electron current through the emitter junction

ISIE, Dubrovnik, June 21st 2005


Spice sub circuit model for ligbt5
Spice sub-circuit model for LIGBT Insulator Technology

P0

Time is increasing

PW

Wt

Wt+δt

Wt+2δt

0

Increasing Anode Voltage

Stable Anode Voltage

  • IPC_TRN : Transient current due to charge sweep-out

ISIE, Dubrovnik, June 21st 2005


Base charge equation
Base charge equation Insulator Technology

  • IN(W) is the MOSFET current

  • IN(0) is the emitter edge electron current

  • IPC_TRN is the charge sweep out current

  • The last term is for the recombination in the base

ISIE, Dubrovnik, June 21st 2005


Other model features
Other model features Insulator Technology

  • Carrier concentration dependent mobility model

  • Gate-Source Drain-Source and Gate-Drain capacitances are implemented

  • Physical based model with 17 parameters

ISIE, Dubrovnik, June 21st 2005


Spice circuit parameters
Spice circuit parameters Insulator Technology

ISIE, Dubrovnik, June 21st 2005


Static characteristics Insulator Technology

ISIE, Dubrovnik, June 21st 2005


Model behavior
Model behavior Insulator Technology

Expanded for I=1A, V=200V

InductiveTurn-off

ISIE, Dubrovnik, June 21st 2005


Transient behavior
Transient behavior Insulator Technology

V=200V, I=2A. V=400V, I=2A.

ISIE, Dubrovnik, June 21st 2005


Transient behavior1
Transient behavior Insulator Technology

Resistive switch, 200W resistor load

ISIE, Dubrovnik, June 21st 2005


Model behavior1
Model behavior Insulator Technology

Toff Energy vs. Von as a function of lifetime

ISIE, Dubrovnik, June 21st 2005


Conclusion
Conclusion Insulator Technology

  • A physical based circuit model for Lateral IGBT

  • Implemented in Spice

  • Defined through 17 physical parameters

  • Compared against device numerical simulation

  • Extendable to Thick SOI and JI-LIGBT

ISIE, Dubrovnik, June 21st 2005


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