Photolithography Free Ge-Se Based Memristive Arrays Material Characterization and Devices Testing. M. R. Latif 1 , I. Csarnovics 1,2 , T. Nichol 1 , S. Kökényesi 2 , A. Csik, 3 M. Mitkova 1 1. Department of Electrical and Computer Engineering Boise State University, Boise, ID - USA
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Photolithography Free Ge-Se Based Memristive Arrays Material Characterization and Devices Testing
VI. Electrical Testing
IV. FilmCharacterization - AFM
RMS value of surface roughness in 25µm2 area of cells # 1, 10 and 20 in the array.
The result shows that the SNMP method is suitable for via formation. Quality of the surface depends upon the films’ structure.
II. Experimental Details
V. Raman Spectroscopy Analysis
III. EDS Mapping
Acknowledgment: This work was supported by the IMI-NFG under NSF Grant # DMR 0844014, TAMOP 4.2.2./B-10/1-2010-0024 and TAMOP 4.2.2.A-11/2/KONV-2012-0032 projects, which are co-financed by the European Union and European Social Fund. The financial support of the Czech Science Foundation (under the project No. P106/11/0506) is also acknowledged.