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學生 : 李國彰 指導教授：林志明

學生 : 李國彰 指導教授：林志明. A Fully Matched High Linearity 2-w PHEMT MMIC Power Amplifier for 3.5 GHz Application. ( IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 15, NO. 10, OCTOBER 2005 ). Outline. Abstract Terms Circuit design 1 Circuit design 2 Process Result

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學生 : 李國彰 指導教授：林志明

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  1. 學生:李國彰指導教授：林志明 A Fully Matched High Linearity 2-w PHEMT MMIC Power Amplifier for 3.5 GHz Application ( IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 15, NO. 10, OCTOBER 2005 )

  2. Outline • Abstract • Terms • Circuit design 1 • Circuit design 2 • Process • Result • Conclusion • References

  3. Abstract • MMIC PA ( monolithic microwave integrated circuit power amplifier ) ( 3.3~3.8 GHz ) ( AlGaAs / InGaAs/GaAs PHEMT ) • Application (WCDMA , WLL , MMDS ) • Performance (30.4dB small-signal gain ) (34dBm 1-dB power compression) (37.1% PAE) (43.5 dBm IP3 )

  4. Terms • PHEMT ( pseudomorphic high electronic mobility transistor) • WCDMA ( wide band code division multiple access ) • WLL ( wireless local loop ) • MMDS (multichannel multipoint distribution service ) • 1-dB power compression point • PAE ( power added efficiency ) • IP3 ( third-order intercept point )

  5. 1 dB power compression point

  6. Circuit design 1 • De-embedded -two port S parameters ( 1.25mm PHEMT ) -HP8510c vector network analyzer • Parasitic parameter ( cold-FET method ) • Intrinsic parameter ( hot-FET method ) -Reference [9][10]

  7. Circuit design 2 • Output matching network -transfer max output power from the FET to a 50 Ω system • Inter-stage matching network -transfer ΓIN,2to minimize the mismatch loss • Input network -improve impedance match for a better input return loss • Micro-strip line ( design rule )

  8. Process • Fabricated by conventional photolithography on AlGaAs/InGaAs/GaAs PHEMT structure • Gate length ( 0.4 μm ) • Gate width ( 1.25mm)(Q1)(5mm)(Q2) • Dimension -1.97mm*1.33mm

  9. Result • MMIC( vd=8v ,vg=-0.81v, Ids=700mA) (driver)(150mA)(power)(550mA) • P1dB ( 34 dBm ) , PAE ( 37.1% )

  10. Conclusion • Small dimension • 34dBm P1dB , 37.1% PAE • 30.4dB small-signal gain • 10/5 dB input / output return loss • 43.5dBm third-order intercept point • Suitable for W-CDMA , MMDS

  11. References • [1] E. Lan, E. Johnson, B. Knappenberger, and M. Miller, “InGaP PHEMTs for 3.5 GHz W-CDMA applications,” in IEEE MTT-S Int. Dig., vol. 2, 2002, pp. 1039–1042. • [2] W. C. B. Peatman, O. Hartin, B. Knappenberger, M. Millerm, and R. Hooper, “Power amplifier for 3.5 GHz WCDMA applications,” in IEEE GaAs IC Dig., Oct. 2000, pp. 71–74. • [3] P. Blount, J. Cuggino, and J. McPhee, “A 3.5 GHz fully integrated power amplifier module,” in 23rd Annu. Technical Dig. Gallium Arsenide Integrated Circuit (GaAs IC) Symp., Oct. 21–24, 2001, pp. 111–114. • [4] T. Murae, K. Fujii, and T. Matsuno, “A compact S-band MMIC high power amplifier module,” in IEEE MTT-S Int. Dig., vol. 2, Jun. 11–16, 2000, pp. 943–946.

  12. References • [5] S. Rockwell, R. Emrick, B. Bosco, S. Franson, M. Miller, E. Johnson, and J. Crowder, “An 8-Watt 3.5 GHz power amplifier with tunable matching,” in 24th Annu. Technical Dig. Gallium Arsenide Integrated Circuit (GaAs IC) Symp., Oct. 20–23, 2002, pp. 185–188. • [6] J. J. Komiak and D. Helms, “High-efficiency 20 Watt S/C-band power amplifier MMIC,” in IEEE 14th Annu. Gallium Arsenide Integrated Circuit Symp. Technical Dig., Oct. 4–7, 1992, pp. 187–190. • [7] J. J.Komiak, “Octave band elevenwatt power amplifier MMIC,” in IEEE Microwave Millimeter-Wave Monolithic Circuits Symp. Dig., May 7–8, 1990, pp. 35–38. • [8] L. E. Larson, RF and Microwave Circuit Design for Wireless Communications. Norwell, MA: Artech House, Inc., 1996. • [9] G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A new method for determining the FET small-signal equivalent circuit,” IEEE Trans. Microw. Theory Tech., vol. MTT-36, no. 7, pp. 1151–1159, Jul. 1988.

  13. References • [10] R. Anholt and S. Swirhun, “Equivalent-circuit parameter extraction for cold GaAs MESFETs,” IEEE Trans. Microw. Theory Tech., vol. MTT-39, no. 7, pp. 1243–1247, Jul. 1991. • [11] S. C. Cripps, “A theory for the prediction of GaAs FET load-pull power contours,” in IEEE MTT-S Int. Dig., 1983, pp. 221–223. • [12] , RF Power Amplifiers for Wireless Communications. Norwood, MA: Artech House, 1999. • [13] H. Z. Liu, C. C.Wang, Y. H.Wang, C. C. Hsu, C. H. Chang,W.Wu, C. L. Wu, and C. S. Chang, “A single-bias C-band 29 dBm PHEMT MMIC power amplifier,” in Int. Conf. Solid State Devices Materials, Nagoya, Japan, Sep. 18–20, 2002, pp. 636–637. • [14] T. Senju, T. Asano, and H. Ishimura, “A very small 3.5 GHz 1 W MMIC power amplifier with die size reduction technologies,” in IEEE Emerging Technologies Symp. Broadband Communications Internet Era Symp. Dig., Sep. 10–11, 2001, pp. 70–73.

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