1. The Process flow for fabrication the resister IC. Step I: The Beginning-Choosing a substrate Before actual wafer fabrication, we must choose the starting wafers. The major choices are the type (N or P), resistivity, and orientation.
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Step I: The Beginning-Choosing a substrate
Before actual wafer fabrication, we must choose the starting wafers. The
major choices are the type (N or P), resistivity, and orientation.
In most IC circuits, the substrate has a resistivity in the range of 25-
50cm, which corresponds to a doping level on the order of 1015cm-3.
The other major parameter we need to specify in the starting substrate is
the crystal orientation. Virtually all modern silicon integrated circuits are manufactured today from wafer with a (100) surface orientation. The principal reason for this is that the properties of Si/Sio2 interface are significantly better when a (100) crystal is used.
Lecture # 2
Silicon nitride form a barrier against the impurities moving toward the
Lecture # 2
1016 -1017 cm-3
The single most important parameter in the both NMOS
and PMOS devices is the threshold voltage
To adjust VTH , two terms that are important are the
doping concentration and the oxide capacitance.
Why oxide layer is stripped and then regrown?
Low ploy sheet resistivity and low gate resistance is required.
Selectivity and anisotropy are big deal hare
TED is a big issue hare!