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Memory (Contd..)

ETEG 431 SG. Memory (Contd..). Memory Timing: Definitions. Non-Volatile Read-Write Memory. Read-Write Memory. Read-Only Memory. Random. Non-Random. EPROM. Mask-Programmed. Access. Access. 2. E. PROM. Programmable (PROM). FLASH. FIFO. SRAM. LIFO. DRAM. Shift Register. CAM.

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Memory (Contd..)

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  1. ETEG 431 SG Memory (Contd..) Memory Timing: Definitions

  2. Non-Volatile Read-WriteMemory Read-Write Memory Read-Only Memory Random Non-Random EPROM Mask-Programmed Access Access 2 E PROM Programmable (PROM) FLASH FIFO SRAM LIFO DRAM Shift Register CAM ETEG 431 SG Memory Semiconductor Memory Classification

  3. BL BL BL VDD WL WL WL 1 BL BL BL WL WL WL 0 GND Diode ROM MOS ROM 1 MOS ROM 2 ETEG 431 SG Memory Read-Only Memory Cells

  4. BL [0] BL [1] BL [2] BL [3] WL [0] V DD WL [1] WL [2] V DD WL [3] V bias Pull-down loads ETEG 431 SG Memory MOS OR ROM

  5. 20 V 0 V 5 V 20 V 0 V 5 V S D S D S D Avalanche injection Removing programming voltage leaves charge trapped Programming results in higher V . T ETEG 431 SG Memory EPROM: Floating-Gate Transistor Programming

  6. Gate Floating gate Drain Source 20 – 30 nm 1 1 n n Substrate p V 10 nm DD ETEG 431 SG Memory WL EEPROM

  7. Control gate Floating gate erasure Thin tunneling oxide 1 1 n source n drain programming p- substrate ETEG 431 SG Memory Flash EEPROM

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