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Understanding Carrier Mobility and Recombination in Semiconductors

This discussion focuses on the concepts of hole and electron mobility in semiconductors, specifically looking at the effects of doping and temperature on carrier mobility in silicon at 300K. It explores the average time between electron and hole scattering events, as well as the resistivity dependence on doping for both n-type and p-type materials. Additionally, the presentation covers recombination-generation processes, including direct Auger recombination and the net recombination rate in silicon. Essential connections with electrostatics and junction band diagrams are also examined.

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Understanding Carrier Mobility and Recombination in Semiconductors

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  1. EE130/230A Discussion 3 PengZheng

  2. Conductivity of a Semiconductor p [qtmp/ mp*]is the hole mobility n [qtmn/ mn*]is the electron mobility • tmn≡ average time between electron scattering events • tmp≡ average time between hole scattering events EE130/230A Fall 2013

  3. Mobility Dependence on Doping Carrier mobilities in Si at 300K EE130/230A Fall 2013 Lecture 4, Slide 3

  4. Mobility Dependence on Temperature EE130/230A Fall 2013 Lecture 4, Slide 4

  5. Resistivity Dependence on Doping For n-type material: R.F. Pierret, Semiconductor Fundamentals, Figure 3.8 For p-type material: Note: This plot (for Si) does not apply to compensated material (doped with both acceptors and donors). EE130/230A Fall 2013 Lecture 4, Slide 5

  6. Recombination-Generation (R-G) of Carriers in Silicon EE130/230A Fall 2013

  7. Recombination Processes R.F. Pierret, Semiconductor Fundamentals, Figure 3.15 Direct R-G Center Auger Recombination in Si is primarily via R-G centers EE130/230A Fall 2013 Lecture 5, Slide 7

  8. Net Recombination Rate (General Case) For arbitrary injection levels, the net rate of carrier recombination is: EE130/230A Fall 2013 Lecture 5, Slide 8

  9. Electrostatics (Step PN Junction) Band diagram: Electrostatic potential: Electric field:

  10. electrostatic potential V(x) x electric field ɛ(x) x potential energy PE(x) x kinetic energy KE(x) x Carrier concentration x Electron drift-current density and the electron diffusion-current density x

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