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About OMICS Group

About OMICS Group.

daniel-sampson
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About OMICS Group

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  1. About OMICS Group OMICS Group International is an amalgamation of Open Access publications and worldwide international science conferences and events. Established in the year 2007 with the sole aim of making the information on Sciences and technology ‘Open Access’, OMICS Group publishes 400 online open access scholarly journals in all aspects of Science, Engineering, Management and Technology journals. OMICS Group has been instrumental in taking the knowledge on Science & technology to the doorsteps of ordinary men and women. Research Scholars, Students, Libraries, Educational Institutions, Research centers and the industry are main stakeholders that benefitted greatly from this knowledge dissemination. OMICS Group also organizes 300 International conferences annually across the globe, where knowledge transfer takes place through debates, round table discussions, poster presentations, workshops, symposia and exhibitions.

  2. About OMICS Group Conferences OMICS Group International is a pioneer and leading science event organizer, which publishes around 400 open access journals and conducts over 300 Medical, Clinical, Engineering, Life Sciences, Pharma scientific conferences all over the globe annually with the support of more than 1000 scientific associations and 30,000 editorial board members and 3.5 million followers to its credit. OMICS Group has organized 500 conferences, workshops and national symposiums across the major cities including San Francisco, Las Vegas, San Antonio, Omaha, Orlando, Raleigh, Santa Clara, Chicago, Philadelphia, Baltimore, United Kingdom, Valencia, Dubai, Beijing, Hyderabad, Bengaluru and Mumbai.

  3. Biosensor&Bioelectronics: Track10-4Electrochemicalbiosensors OnExoticNanostructure forbio-FET HiroshiWatanabe*,AndyLee*,IkuoKurachi** *Dept.Elec.&Comp.Eng.,NationalChiaoTungUniversity **HighEnergyAcceleratorResearchOrganization 8/13/2014(SanAntonio,TX)

  4. Motivation 25μmlong and2.4mmwide Koike,et.al. N-Semi. tailing ~2nm Ta2O7(6nm):K=27 EOT=0.9nm EOT+1.8nm=2.7nm 8/13/2014(SanAntonio,TX)

  5. SurfaceCharge Sensitive! Charge ʹͷݑ݉×ʹ.Ͷ݉݉ ʹ.Ͷ݉݉ S D In-dopedZnO ʹͷݑ݉ HiroshiWatanabe,NCTU 8/13/2014(SanAntonio,TX)

  6. SurfaceCharge Sensitive? Charge ʹͷݑ݉×ʹ.Ͷ݉݉ ʹ.Ͷ݉݉ S D In-dopedZnO ʹͷݑ݉ HiroshiWatanabe,NCTU 8/13/2014(SanAntonio,TX)

  7. SNW Sensitive Charge ʹͷݑ݉×ʹ.Ͷ݉݉ ࡺnanowiresareconfigured. S D ʹͷݑ݉ HiroshiWatanabe,NCTU 8/13/2014(SanAntonio,TX)

  8. GetAround NotGetAround Speeddown S D 8/13/2014(SanAntonio,TX)

  9. X:TargetY:Receptor ⇆ XY ʹ.Ͷ݉݉ X+Y ʹͷݑ݉ Senseit!! 8/13/2014(SanAntonio,TX)

  10. LimitOfDetection(LOD) ܭ ⇆ XY X+Y K:dissociationConst. ∆� ܺ � ௗ௦ ௑ =∆ܸ = ܻ × + ܾܽܿ݇�ݎ݋ݑ݀ ௧ �௠ ܺ +ܭ ܥ0 ܭ ���0௒೘�� �೙೚���௚೘−௕௔௖�௚௥௢௨௡ௗ ܮܱܦ= Macroscopic —ͳ M.A.Reed,IEDM2013-208 8/13/2014(SanAntonio,TX)

  11. IndependentSense,ε≔௠� Sensitive! Charge ʹͷݑ݉×ʹ.Ͷ݉݉ ࡹ nanowiresareconfigured. Ͳ S/AS/A ͳ ʹ S/AS/AS/AS/AS/AS/A S ܯ−2ܯ−ͳ ࢓ሺ=૜ሻnanowiresdetectedthechargebyHuman IgG. 8/13/2014(SanAntonio,TX)

  12. IndependentSense,ε≔௠� �ܹ GateWidth(GW)=ʹ.Ͷ݉݉ Line(L),SNW∅=͵݊݉ ܯ= ܮ+ܵ =ͶͲK Space(S),SNW-to-SNW=ͷ͹݊݉ Rev.LOD=�×LOD ݉=ͶͲ ε=Ͳ.ͳ%; 40 “/A’sdetectthesignalchange. 8/13/2014(SanAntonio,TX)

  13. SOI(20nm) N-type(ͳͲଶ0ܿ݉−ଷ) 8/13/2014(SanAntonio,TX)

  14. Line/Spaceby30nmTech. L=30nmS=30nm 8/13/2014(SanAntonio,TX)

  15. Sliming <∅>=͵݊݉ <S>=57nm 8/13/2014(SanAntonio,TX)

  16. BL-Decoder SNW(~um) SGS SGD CSL=0V VDD=1V YYYYYYYYYYYYY S/A N-type SGS SGD VDD=1V YYYYYYYYYYYYY S/A N-type SGS SGD VDD=1V YYYYYYYYYYYYY S/A N-type SGS SGD VDD=1V YYYYYYYYYYYYY S/A N-type 8/13/2014(SanAntonio,TX)

  17. BL-Decoder 15 CSL=0V ଶ ܰ݀ ܰ݀ ܰ݀ � � ܸ =ܸ+ ln + +ͳ � ௤ ௘௙௙ ݊�ଶ |ܰ݀| ʹ݊� nMOSFET SGS pMOSFET SGD X YYYYYYYYYYYYY VDD=1V S/A N-type Self-Heating Rhyner,IEDM13-790 Ͳ.ͺ݊݉ X −ܸ௘௙௙/ʹ +ܸ௘௙௙/ʹ ܧܱܶ=ݏ݁ݒ݁ݎ݈ܽ݊ܽ݊݋݉݁ݐ݁ݎݏ Semi.Nano-Wire(N-type) 8/13/2014(SanAntonio,TX)

  18. ModelingforDeviceSimulation N=0 N=2 Wemaysensethischange. Id Vd −ܸ௘௙௙/ʹ +ܸ௘௙௙/ʹ Semi.Nano-Wire(N-type) 8/13/2014(SanAntonio,TX)

  19. ElectricallyFloatingIsland Howtodeterminethepotential? Adopted͞Capacitance͟sofar. ܭ ���0௒೘�� �೙೚���௚೘−௕௔௖�௚௥௢௨௡ௗ ૛ ∆E=� ܮܱܦ= —ͳ ૛� How toknow͞Capacitance͟? 8/13/2014(SanAntonio,TX)

  20. ElectricallyFloatingIsland DBL≅�࢔࢓ Knowthepotentialwithout ͞Capacitance͟. How toknow͞Capacitance͟? 8/13/2014(SanAntonio,TX)

  21. ElectricallyFloatingIsland H.Watanabe, et.al., IEEETEDvol.61, pp. 1145-1152,2014. 8/13/2014(SanAntonio,TX)

  22. Sim.Results 1.8 (nm) 1.6 EOT=2.0EOT=1.6EOT=1.4 1.4 1.2  JelecN  1 JelecN0 0.8 0.6 1-order reduction 0.4 0.2 0 -6 -4 -202 N,storedindot 4 6 8/13/2014(SanAntonio,TX)

  23. OnfabricationTolerance Beforeexposedtosolution Widthfluctuation program program Toothin, toohighresistivity Error Correctioniseasy. 8/13/2014(SanAntonio,TX)

  24. ByThinkingExp.&DeviceSimulation IndependentSenseSystem PowerfulErrorCorrection Optimizationofbio-FETs Acknowledgement: TheauthorsappreciateProf.Koike(OIT)forhelpfuldiscussions. 8/13/2014(SanAntonio,TX)

  25. Let Us Meet Again We welcome you all to our future conferences of OMICS Group International Please Visit:www.omicsgroup.com www.conferenceseries.com www.pharmaceuticalconferences.com

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