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GaAs Based High-Power Photodiodes for Advanced LIGO LIGO-G020370-00-Z

GaAs Based High-Power Photodiodes for Advanced LIGO LIGO-G020370-00-Z. David Jackrel, PhD Candidate Dept. of Materials Science and Engineering Advisor: James S. Harris LSC Conference, LHO August 19 th -22 nd , 2002. Photodiode Specifications. InGaAs vs. GaInNAs. GaInNAs InGaAs.

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GaAs Based High-Power Photodiodes for Advanced LIGO LIGO-G020370-00-Z

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  1. GaAs Based High-Power Photodiodesfor Advanced LIGOLIGO-G020370-00-Z David Jackrel, PhD Candidate Dept. of Materials Science and Engineering Advisor: James S. Harris LSC Conference, LHO August 19th-22nd, 2002

  2. Photodiode Specifications

  3. InGaAs vs. GaInNAs GaInNAs InGaAs

  4. InGaAs vs. GaInNAs PD Designs 2 m 1 m GaInNAs lattice-matched to GaAs!

  5. Rear-Illuminated PD Advantages • High Power • Linear Response • High Speed Conventional PD Adv. LIGO Rear-Illuminated PD

  6. GaInNAs Photodiode Linearity

  7. GaInNAs PD Efficiency Eff 20% + 30% + 15% = 65% Measured Reflected Transmitted

  8. InGaAs PD: Dark Current

  9. Junction “Passivation” Plasma Etching  Ar, BCl3, Cl2 Polyimide Spinning  Cresol-novolak Resin (AZ 9260 PR)

  10. InGaAs: Polyimide “Passivated”

  11. Future Work • GaInNAs • 2-micron I-Layer • Etching and Passivating • InGaAs • Thinned Substrate • Etching and Passivating • RF Setup • High Power Voltage Source

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