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Fabrication and testing of III-V/Si tandem solar cells

Fabrication and testing of III-V/Si tandem solar cells. Stefano Soresi PROMIS Mid-Term Review London , 7-8 December 2016. Some informations…. Workpackage: 3 (Materials for Energy) Location: III-V Lab (Palaiseau, France) Supervisor: Jean Decobert University: Université de Montpellier

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Fabrication and testing of III-V/Si tandem solar cells

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  1. Fabrication and testing of III-V/Si tandem solar cells Stefano Soresi PROMIS Mid-TermReview London, 7-8 December 2016

  2. Some informations… • Workpackage: 3 (Materials for Energy) • Location: III-V Lab (Palaiseau, France) • Supervisor: Jean Decobert • University: Université de Montpellier • Academic supervisor: Eric Tournié

  3. Personal background • 2005-2010: Scientific High School ‘Lorenzo Respighi’ (Piacenza) • 2010-2013: BachelorDegreein Physicsat the Universityof Parma Thesison MagnetocaloricEffect • 2013-2015: Master Degreein Hard MatterPhysicsatthe University of Parma Thesison CIGS Solar Cellsin collaborationwith Panariagroup Industrie Ceramiche S.p.A. • 2015-2018: PhDatIII-V Lab

  4. Introduction to the project • Fabrication and testing of III-V tandem solar cells on Silicon substrates • Development of all the production steps of a solar cell (no experience on solar cells at III-V Lab before Promis project): design, growth, material characterization, processing, final device characterization • Study of the effects arising from the use of a lattice mismatched substrate • Collaboration with other partners of WP3: • University of Montpellier: supply of adequate substrates • University of Cadiz: TEM characterization of final device • Final aim: realization of efficient and cheap devices for space and terrestrial application

  5. Background • Motivation: need to combine III-V multijunction (high efficiency, efficientbandgapengineering) with silicon (cheap, available, efficient) • Issues: lattice and thermalmismatch, polar/non-polarinterfaces Possibilities: Wafer bonding III-V Lab Direct growth via template University of Montpellier

  6. Experimental techniques • Growth and materialcharacterization: MetalorganicVapourPhaseEpitaxy (MOVPE), XRD, C-V profiles, photoluminescence • Processing: photolithography, ionbeamdeposition (IBD), dualionbeamsputtering (DIBS), ionbeametching (IBE), reactiveionetching (RIE), plasma-enhancedchemicalvapordeposition (PECVD), wetetching • Devicescharacterization: I-V curve and EQE measurements under solar simulator (in collaboration with GeePsCentraleSupelec, Orsay)

  7. Main results: monojunction solar cell Scheme of the most efficient cell SIMS profile Set of 5 photolithographic masks Validated at Probion J-V profile of the most efficient cell Validated at GeePs for photovoltaic applications L-edit

  8. Main results: AlInAs:C/InP:S tunnel junction Scheme of the n on p structure C-V profile Scheme of the p on n structure Validated by Biorad measurements J-V profile (current peak) J-V profile Vpeak= 125 – 200 mV Jpeak= 970 – 1030 A/cm² Specific resistance at low bias : - 3.5-7.8 × 10-5  cm² Validated at GeePs for photovoltaic applications

  9. The next steps First idea for a multijunction solar cell: And then, first attemps with Si substrates…

  10. Summary Aim of the PhD: study and realization of III-V/Si multijunction solar cells • Training on all the steps of the process: ✓ • Setup of a complete photovoltaic production system: ✓ • Design of a set of efficientphotolithographicmasks: ✓ • Monojunction solar cells on InP substrates: ✓ • Efficient tunnel junctions: in progress • Multijunction solar cells on InP substrates: starting • Transfer of the structures on Si substrates: afterwards • Study of the effects due to the new substrates: afterwards

  11. Skills acquired • Epitaxy: how to use a MOVPE reactor; how to prepare a growth; main difficulties and critical aspects of this technique; how to characterize the as-grown samples; brief introduction to MBE growth (secondment in Montpellier) • Processing: how to handle with the main techniques used in III-V Lab clean rooms; how to critically evaluate the as-realized devices and how to implement the different steps of the whole process • Device characterization: how to characterize the complete devices and, in particular, how to identify the sources of eventual defects in the complete production process • Design of a complete set of photolithographic masks

  12. Outputs • Participationat the JournéesNationalesduPhotoVoltaïque (JNPV); Dourdan (France), 01-04/12/2015 • Participation+ poster at the Journées Nano, Micro et Optoélectronique (JNMO); Les Issambres (France), 30/05/2016-01/06/2016 • Participation+ poster at the International Conference on MolecularBeamEpitaxy; Montpellier (France), 04-09/09/2016 • Involvement in the Impetus Project

  13. Future work & aspirations • Stay in the research world (perhaps finding a postdoc) • Possibly, keep working on solar cells or, more generally, on topics that allow to take advantage of the skills acquired (MOVPE and/or clean room processing) • Europe

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