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Mara Bruzzi 1 and Michael Moll 2 1 INFN Florence, Italy 2 CERN- PH-DT2 - Geneva - Switzerland

85 meeting of the LHCC, 15 November 2006. RD50 STATUS REPORT 2006 Development of radiation hard sensors for very high luminosity colliders. on behalf of RD50. Mara Bruzzi 1 and Michael Moll 2 1 INFN Florence, Italy 2 CERN- PH-DT2 - Geneva - Switzerland. OUTLINE. The RD50 collaboration

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Mara Bruzzi 1 and Michael Moll 2 1 INFN Florence, Italy 2 CERN- PH-DT2 - Geneva - Switzerland

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  1. 85 meeting of the LHCC, 15 November 2006 RD50 STATUS REPORT 2006Development of radiation hard sensors for very high luminosity colliders on behalf of RD50 Mara Bruzzi1 and Michael Moll21INFN Florence, Italy 2CERN- PH-DT2 - Geneva - Switzerland OUTLINE • The RD50 collaboration • Results obtained in 2006 • Summary (Status Nov. 2006) • Work plan for 2007 • Resources request for 2007 http://www.cern.ch/rd50

  2. The CERN RD50 Collaborationhttp://www.cern.ch/rd50 RD50: Development of Radiation Hard Semiconductor Devices for High Luminosity Colliders • approved as RD50 by CERN June 2002 • Main objective: Development of ultra-radiation hard semiconductor detectors for the luminosity upgrade of the LHC to 1035 cm-2s-1 (“Super-LHC”). Challenges: - Radiation hardness up to 1016 cm-2 required - Fast signal collection (Going from 25ns to 10 ns bunch crossing ?) - Low mass (reducing multiple scattering close to interaction point) - Cost effectiveness (big surfaces have to be covered with detectors!) • Presently 264 members from 52 institutes Belarus (Minsk), Belgium (Louvain), Canada (Montreal), Czech Republic (Prague (3x)), Finland (Helsinki, Lappeenranta), Germany (Berlin, Dortmund, Erfurt, Freiburg, Hamburg, Karlsruhe), Israel (Tel Aviv), Italy (Bari, Bologna, Florence, Padova, Perugia, Pisa, Trento, Turin), Lithuania (Vilnius), The Netherlands(Amsterdam),Norway (Oslo (2x)), Poland (Warsaw (2x)), Romania (Bucharest (2x)),Russia (Moscow), St.Petersburg), Slovenia (Ljubljana), Spain (Barcelona, Valencia), Switzerland (CERN, PSI), Ukraine (Kiev), United Kingdom(Diamond, Exeter, Glasgow, Lancaster, Liverpool, Sheffield), USA (Fermilab, Purdue University, Rochester University, SCIPP Santa Cruz, Syracuse University, BNL, University of New Mexico) Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -2-

  3. 2006: Research Line “New Materials” suppressed • R&D performed by RD50 on SiC and GaN did not show promising results • Activity within RD50 reduced on Working Group level to conclude the started work program Scientific Organization of RD50Development of Radiation Hard Semiconductor Devices for High Luminosity Colliders Spokespersons Mara Bruzzi, Michael Moll INFN Florence, CERN ECP Defect / Material CharacterizationBengt Svensson(Oslo University) Defect EngineeringEckhart Fretwurst(Hamburg University) New MaterialsE: Verbitskaya(Ioffe St. Petersburg) Pad DetectorCharacterizationG. Kramberger(Ljubljana) New StructuresR. Bates (Glasgow University) Full DetectorSystemsGianluigiCasse (Liverpool University) • Characterization ofmicroscopic defects • properties of standard-, defect engineered and new materials pre- and post-irradiation • Defect engineered silicon: • Epitaxial Silicon • CZ, MCZ • Other impuritiesH, N, Ge, … • Thermal donors • Pre-irradiation • Oxygen Dimer • Development of new radiation tolerant materials: • SiC • GaN • other materials • Test structure characterization IV, CV, CCE • NIEL • Device modeling • Common irrad. • Standardization of measurements • Evaluation of new detector structures • 3D detectors • Thin detectors • Cost effective solutions • Semi 3D • LHC-like tests • Links to HEP • Links to R&D on electronics • Comparison: pad-mini-full detectors • Pixel group Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -3-

  4. RD50 approaches to develop radiation harder tracking detectors • Material Engineering -- Defect Engineering of Silicon • Understanding radiation damage • Macroscopic effects and Microscopic defects • Simulation of defect properties & kinetics • Irradiation with different particles & energies • Oxygen rich Silicon • DOFZ, Cz, MCZ, EPI • Oxygen dimer & hydrogen enriched Silicon • Pre-irradiated Silicon • Influence of processing technology • Material Engineering -- New Materials(work concluded within RD50) • Silicon Carbide (SiC), Gallium Nitride (GaN) • Device Engineering (New Detector Designs) • p-type silicon detectors (n-in-p) • thin detectors • 3D detectors • Simulation of highly irradiated detectors • Semi 3D detectors and Stripixels • Cost effective detectors Related Works – Not conducted by RD50 • “Cryogenic Tracking Detectors” (CERN RD39) • “Diamond detectors” (CERN RD42) • Monolithic silicon detectors • Detector electronics (Some work within RD50 on SiGe electronics) Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -4-

  5. “new”in 2006 Silicon Materials under Investigation by RD50 • DOFZ silicon- Enriched with oxygen on wafer level, inhomogeneous distribution of oxygen • CZ/MCZ silicon- high Oi (oxygen) and O2i (oxygen dimer) concentration (homogeneous) - formation of shallow Thermal Donors possible • Epi silicon- high Oi , O2i content due to out-diffusion from the CZ substrate (inhomogeneous) - thin layers: high doping possible (low starting resistivity) • Epi-Do silicon - as EPI, however additional Oi diffused reaching homogeneous Oi content Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -5-

  6. Process of Si sensors in framework of RD50 • Recent production of Silicon Strip, Pixel and Pad detectors (non exclusive list): • CIS Erfurt, Germany • 2005/2006/2007 (RD50): Several runs with various epi 4” wafers only pad detectors • CNM Barcelona, Spain • 2006 (RD50): 22 wafers (4”), (20 pad, 26 strip, 12 pixel),(p- and n-type),(MCZ, EPI, FZ) • 2006 (RD50/RADMON): several wafers (4”), (100 pad), (p- and n-type),(MCZ, EPI, FZ) • HIP, Helsinki, Finland • 2006 (RD50/RADMON): several wafers (4”), only pad devices, (n-type),(MCZ, EPI, FZ) • 2006 (RD50) : pad devices, p-type MCz-Si wafers, 5 p-spray doses, Thermal Donor compensation • 2006 (RD50) : full size strip detectors with 768 channels, n-type MCz-Si wafers • IRST, Trento, Italy • 2004 (RD50/SMART): 20 wafers 4” (n-type), (MCZ, FZ, EPI), mini-strip, pad 200-500mm • 2004 (RD50/SMART): 23 wafers 4” (p-type), (MCZ, FZ), two p-spray doses 3E12 amd 5E12 cm-2 • 2005 (RD50/SMART): 4” p-type EPI • 2006 (RD50/SMART): new SMART mask designed • Micron Semiconductor L.t.d (UK) • 2006 (RD50): 4”, microstrip detectors on 140 and 300mm thick p-type FZ and DOFZ Si. • 2007 (RD50): 93 wafers 6”, (p- and n-type), (MCZ and FZ), (strip, pixel, pad) • Sintef, Oslo, Norway • 2005 (RD50/US CMS Pixel) n-type MCZ and FZ Si Wafers • Hamamatsu, Japan • In 2005 Hamamatsu started to work on p-type silicon in collaboration with ATLAS upgrade groups (surely influenced by RD50 results on this material) • M.Lozano, 8th RD50 Workshop, Prague, June 2006 • A.Pozza, 2nd Trento Meeting, February 2006 • G.Casse, 2nd Trento Meeting, February 2006 • D. Bortoletto, 6th RD50 Workshop, Helsinki, June 2005 • N.Zorzi, Trento Workshop, February 2005 … all available wafer types processed, we have more detectors than can be tested … Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -6-

  7. Reminder: Radiation Damage in Silicon Sensors Influenced by impuritiesin Si – Defect Engineeringis possible! Same for all tested Silicon materials! • Two general types of radiation damage to the detector materials: Bulk (Crystal) damagedue to Non Ionizing Energy Loss (NIEL) - displacement damage, built up of crystal defects – • Change of effective doping concentration (higher depletion voltage, under- depletion) • Increase of leakage current (increase of shot noise, thermal runaway) • Increase of charge carrier trapping (loss of charge) Surface damagedue to Ionizing Energy Loss (IEL) - accumulation of positive in the oxide (SiO2) and the Si/SiO2 interface –affects: interstrip capacitance (noise factor), breakdown behavior, … • Impact on detector performance and Charge Collection Efficiency (depending on detector type and geometry and readout electronics!)Signal/noise ratio is the quantity to watch  Sensors can fail from radiation damage ! Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -7-

  8. Standard FZ, DOFZ and MCz Silicon Situation in 2004/2005: n-type MCZ more radiation tolerant than n-type DOFZ 24 GeV/c proton irradiation • Standard FZ silicon • type inversion at ~ 21013 p/cm2 • strong Neff increase at high fluence • Oxygenated FZ (DOFZ) • type inversion at ~ 21013 p/cm2 • reduced Neff increase at high fluence • MCZ silicon • no type inversion (SCSI)in the overall fluence range  donor generation (and lower V2O production) overcompensates acceptor generation in high fluence range [1] M. Moll et al. NIM A 546 (2005), 99-107 [2] data on [1] related 380mm-thick devices here normalised to 300mm [3] E. Tuovinen et al. In press on NIM A [4] M. Moll et al. RD50 workshop, CERN Nov. 2005 Situation in 2006:more complex and partly confusing Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -8-

  9. Annealing @ 80°C SCSI at late stage Typical for n-type “Reverse annealing is beneficial” • Cz, MCz-n No SCSI; verified by TCT & annealing curves • MCz-p ?? (SCSI expected, see annealing data to the right) • However, after 10-30 MeV proton irradiation shape of annealing curves indicate that n - MCz detectors undergo SCSI(J. Harkonen NIM A541, p202, SMART coll. 7th RD50 workshop) Proton irradiated n- and p-type MCz Fluence dependence (24 GeV/c) Do we undergo SCSI (i.e. movement of the main junction)? G. Kramberger, RESMDD06, Oct 2006V. Cindro et al., 8th RD50 workshop Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -9-

  10. Neutron irradiated Cz/MCz V. Cindro et al., 8th RD50 workshop N. Manna for SMART, 8th RD50 workshopG.Kramberger, RESMDD06, October 2006 • MCz-n undergoes SCSI (confirmed by TCT, annealing curve) • Stable damage (slope in curve) same for all materials • Beneficial and reverse annealing similar between FZ, DOFZ and MCZ • Lower resistivity n-type has the advantage of later SCSI After neutron irradiation (almost) all materials behave similarly! Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -10-

  11. EPI Devices – Irradiation experiments 2006: Annealing typical for p-type observed • SCSI observed for r>150 Wcm (to be verified ??) G.Lindström et al.,10th European Symposium on Semiconductor Detectors, 12-16 June 2005G.Kramberger et al., Hamburg RD50 Workshop, August 2006 • Epitaxial silicon • Thickness: 25, 50 m (~ 50 cm), 75 m (~ 150 cm);New in 2006: 150 m (~ 400 cm) • Advantage: Only little change in depletion voltage up to 1016 particles/cm2 • Proton irradiations (2005) demonstrated: No type inversion up to ~ 1016 p/cm2 • Neutron irradiations(2005): No type inversion up to ~ 1016 n/cm2 (25, 50mm thick layers) Depletion Voltage:35V (25mm) 120V (50mm)220V (75mm) Neutron irradiation 2006 • CCE (Sr90 source, 25ns shaping): 6400 e (150 mm; 2x1015 n/cm-2) 3300 e (75mm; 8x1015 n/cm-2) 2300 e (50mm; 8x1015 n/cm-2) 320V (150mm) Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -11-

  12. Neff changes - Summary Reminder for non experts:n-type = positive space chargep-type = negative space charge • Net space charge increase during irradiation (is positive or negative space charge added ?) • “reverse annealing” almost same for all materials (delayed by higher [O]) using Epi/MCz/Cz gives possibility to storage at room temperature due to compensation. • Epi-n most tolerant material for neutron damage! Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -12-

  13. Device engineeringp-in-n versus n-in-p detectors p-type silicon after high fluences: n-type silicon after high fluences: n+on-p p+on-n • n-on-p silicon, under-depleted: • Limited loss in CCE • Less degradation with under-depletion • Collect electrons (fast) • p-on-n silicon, under-depleted: • Charge spread – degraded resolution • Charge loss – reduced CCE Be careful, this is a very schematic explanation,reality is more complex (e.g. double junction)! Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -13-

  14. no reverse annealing visible in the CCE measurement ! Possible explanation: Reverse annealing of Vfd compensated by smaller trapping of electrons. n-in-p microstrip detectors n-in-p: - no type inversion, high electric field stays on structured side - collection of electrons • n-in-p microstrip detectors on p-type FZ (280mm thick, 80mm pitch, 18mm implant ) • Detectors read-out with 40MHz • acceptable agreement between simulation and measurement Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -14-

  15. n+ electrodes ionizing particle p-type substrate n+ n+ cross-section between two electrodes strip detector p-stop electrons are swept away by the transversal field Uniform p+ layer holes drift in the central region and diffuse towards p+ contact n+ metal 3D – Single Column Type (1/2) • Simplified 3D architecture • n+ columns in p-type substrate, p+ backplane • operation similar to standard 3D detector • Simplified process • hole etching and doping only done once • no wafer bonding technology needed • single side process (uniform p+ implant) Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -15-

  16. 3D – Single Column Type (2/2) Testson diode and microstrip structures M. Scareingella, STD6, September 2006 • CCE measurements before irradiation • 90Sr electrons - shaping time 400ns • 300mm thick MCz Si; 100% CCE at 30- 60V • CCE in agreement with CV analysis • Position sensitive TCT (laser beam ~ 7 mm with 3 amplifiers monitoring induced currents) • charge collection within 20ns • First irradiations performed • low depletion voltage after irradiation 300mm 20 ns C.Piemonte, STD6, September 2006 G. Kramberger et al., 8th RD50 workshop 2006 • CCE measurements are under way Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -16-

  17. Outlook: 3D – Double Column Type • Two processes under way • CNM, Spain and Uni. of Glasgow, UK • ITC-IRST, Trento, Italy • Simplified processing due to “incomplete drilling” • First detectors expected in early 2007 • Different structures on the mask • ATLAS pixel, Medipix 2 • strip detectors, 3D pads • Pilatus Pixels, MOS test structures, etc. Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -17-

  18. Comparison of measured collected charge on different radiation-hard materials and devices Line to guide the eye for planar devices pixels strips 160V [1] G. Casse et al. NIM A (2004) [2] M. Bruzzi et al. STD06, September 2006 [3] G. Kramberger, RD50 Work. Prague 06 [4] W: Adams et al. NIM A (2006) [5] F. Moscatelli RD50 Work.CERN 2005 [6] C. Da Vià, "Hiroshima" STD06 (charge induced by laser) M. Bruzzi, Presented at STD6 Hiroshima Conference, Carmel, CA, September 2006 • Thick (300mm) p-type planar detectorscan operate in partial depletion, collected charge higher than 12000e up to 2x1015cm-2. • Most charge at highest fluences collected with3D detectors • Silicon comparable or even better than diamondin terms of collected charge(BUT: higher leakage current – cooling needed!) Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -18-

  19. - Status 2006 ( I ) - At fluences up to 1015cm-2(Outer layers of a SLHC detector) the change of the depletion voltage and the large area to be covered by detectors is the major problem. • Inner radius (20-60 cm)– essential to use n+ readout (n+-in-n or n+-in-p) • MCZ, CZ silicon detectors could be a cost-effective radiation hard solution • small stable damage (small increase of depletion voltage with fluence) • beneficial long term annealing: - compensation of donors with acceptors - effective electron trapping getting smaller • drawback: n-type not very tolerant to neutrons • EPI detectors (providing that p-type EPI has the same properties as n-type EPI) • All benefits of MCZ and CZ detectors + more tolerant to neutron damage • drawback: Smaller charge as devices are thin, presently 150 mm, (needs to be optimized) • Oxygenated p-type silicon microstrip detectors show very encouraging results: • CCE  6500 e; Feq=41015 cm-2, 300mm • No degradation visible in long term CCE measurements • Outer radius (60-120 cm) – large area p+ readout maybe more cost effective • MCZ/CZ n-type Si, low resistivity gives prolonged time to type inversion (incomplete donor removal) • DOFZ-n (same as for MCZ/CZ) Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -19-

  20. - Status 2006 ( II ) - At the fluence of 1016cm-2(Innermost layers of a SLHC detector) the active thickness of any silicon material is significantly reduced due to trapping. • Thinner/EPI detectors:– n+ readout (n+-in-n or n+-in-p), smartly segmented • beneficial long term annealing – room temperature maintenance beneficial • tested up to 150 mm thickness (smaller capacitance, better initial performance). • drawback: epi-p needs still more tests • thickness tested: up to 150 mm • CCE measured with 90Sr e, shaping time 25 ns, 75mm, Φeq=8·1015 cm-2 3200 e (mp-value) • 3D detectors: 3D-stc processed at IRST-Trento • Good process yield and low leakage currents (< 1pA/column) • Breakdown @ 50V for p-spray and >100V for p-stop structures • CCE 100% before irradiation • first radiation hardness tests under way • 3D with 2-type columns will be produced in 2007 Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -20-

  21. Comment on links to LHC Experiments • Many RD50 groups are directly involved in ATLAS, CMS and LHCb upgrade activities (natural close contact). They report regularly to RD50 members and management. • We are and were invited to present the RD50 work on ATLAS and CMS upgrade meetings (transfer of knowledge) • Devices matching ATLAS and CMS strip and pixel readout patterns on all recent RD50 4” and 6” masks ! • LHC speed front-end electronics (ATLAS, CMS and LHCb (soon)) used by RD50 members • CMS/RD50 groups gathered to set up a beam telescope for future test beams of newly developed strip detectors • 3D detectors will be provided to ATLAS Pixel for beam tests (already agreed) • MCZ wafers provided by RD50 to CMS Pixel for processing at Sintef • …. Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -21-

  22. Workplan for 2007 (1/2) • Characterization of irradiated silicon: • Understand role of defects in annealing of p- and n-type MCz vs FZ Si • Continue study on oxygen dimers • Extend studies on neutron irradiated MCz & FZ Si • Understand role of carbon and hydrogen better • Continue study of epitaxial Si of increased thickness and p-type • Production of epitaxial silicon on FZ substrate • Hydrogenation of silicon detectors • Test uniformity of MCZ p-type silicon over the wafer • Characterization (IV, CV, CCE witha- and b-particles) of test structures produced with the common RD50 masks • Common irradiation program with fluences up to 1016cm-2 • Clarification of the situation regarding the type inversion of MCZ silicon (parameterization of radiation damage w.r.t Neff) Defect and MaterialCharacterization Defect Engineering Pad DetectorCharacterization Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -22-

  23. Workplan for 2007 (2/2) • Production of 3D detectors made with n+ and p+ columns • Measurement of charge collection after irradiation of the processed single type column 3D detectors • Comparison of thin (140mm) and thick (300mm) strip detectors produced in 2006. • Irradiation and test (CCE of strip detectors with fast electronics) of common segmented structures (n- and p-type FZ, DOFZ, MCz and EPI) on 4” and 6” wafers(Within RD50 common irradiation programs) • Long term annealing of segmented sensors • Investigation of the electric field profile in irradiated segmented sensors • Continue and strengthen activities linked to LHC experiments – achiever closer link to LHC experiments upgrade activities (e.g. common projects, test beams) New Structures Full Detector Systems Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -23-

  24. Resources requested for 2007 • Common Fund: RD50 has a Common Fund and does not request financial support. • Lab space and technical support at CERN:As a member of the collaboration, the section PH-DT2/SD should provide (as in 2006) access to available lab space in building 14 (characterization of irradiated detectors), in building 28 (lab space for general work) and in the Silicon Facility (hall 186, clean space). • CERN Infrastructure:- One collaboration workshop in November 2007 and working group meetings.- Keeping the RD50 office in the barrack 591 Mara Bruzzi and Michael Moll on behalf of the RD50 CERN Collaboration – LHCC, November 13, 2006 -24-

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