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Temperature-Dependent Electrical Characterization of Multiferroic BFO Thin Films. Danielle Hitchen, Sid Ghosh, K. Hassan, K. Banerjee, J. Huang Electrical and Computer Engineering Rutgers University. Outline . Motivation Multiferroics Hysteresis: The Enabling Property Ferroelectricity
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Danielle Hitchen, Sid Ghosh, K. Hassan, K. Banerjee, J. Huang
Electrical and Computer Engineering
Storage limitations on existing memory devices as well as
the desire for faster write/erase capability on non-volatile
memory devices has increased the demand for better
materials that accord with standard integrated circuit
 Zambrano, Raffaele. “Applications and issues for ferroelectric NVMs.” Materials Science in Semiconductor Processing 5
Hysteresis: the ‘memory’
a material retains of a
Ferroelectric materials possess a spontaneous, stable polarization that switches hysteretically in an applied electric field.
Fractal ferroelectric domains in thin
films of multiferroic BiFeO3.
The probe (left) controls temperature and
pressure in the chamber housing the sample.
Leakage current is plotted in the semiconductor
precision analyzer (above).
Data is from
on a single
taken at room
more resistive as
increased; this is
evidenced by the
shape of the curve.
trend at higher
is not what is
expected, and may
relate to the
our device leaks
more current, as
The curved data
a dielectric; a linear
slope would be a
increase, we see
(All data was taken
is high at high
vs. 2.0E5 nA/cm2).
I would like to thank the National Science Foundation and the US Department of Defense for funding my research (EEC-NSF Grant # 0755115 and CMMI-NSF Grant # 1016002), as well as the University of Illinois at Chicago for hosting my undergraduate research program.
I would also like to express my thanks to the directors of my program, Professors Christos Takoudis and Greg Jursich, as well as to Professor Siddhartha Ghosh who advised me in my research.
Finally, thank you Koushik Banerjee, Jun Huang, Khaled Hassan and Hsu Bo for informing my research, assisting with the equipment, and providing me with necessary literature.