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MATHEMATICAL AND COMPUTATIONAL PROBLEMS IN SEMICONDUCTOR DEVICE TRANSPORT

MATHEMATICAL AND COMPUTATIONAL PROBLEMS IN SEMICONDUCTOR DEVICE TRANSPORT. A.M.ANILE DIPARTIMENTO DI MATEMATICA E INFORMATICA UNIVERSITA’ DI CATANIA PLAN OF THE TALK: MOTIVATIONS FOR DEVICE SIMULATIONS PHYSICS BASED CLOSURES NUMERICAL DISCRETIZATION AND SOLUTION STRATEGIES

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MATHEMATICAL AND COMPUTATIONAL PROBLEMS IN SEMICONDUCTOR DEVICE TRANSPORT

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  1. MATHEMATICAL AND COMPUTATIONAL PROBLEMS IN SEMICONDUCTOR DEVICE TRANSPORT • A.M.ANILE • DIPARTIMENTO DI MATEMATICA E INFORMATICA • UNIVERSITA’ DI CATANIA • PLAN OF THE TALK: • MOTIVATIONS FOR DEVICE SIMULATIONS • PHYSICS BASED CLOSURES • NUMERICAL DISCRETIZATION AND SOLUTION STRATEGIES • RESULTS AND COMPARISON WITH MONTE CARLO SIMULATIONS • NEW MATERIALS • FROM MICROELECTRONICS TO NANOELECTRONICS

  2. MODELS INCORPORTATED IN COMMERCIAL SIMULATORS • ISE or SILVACO or SYNAPSIS • DRIFT-DIFFUSION • ENERGY TRANSPORT • SIMPLIFIED HYDRODYNAMICAL • THERMAL • PARAMETERS PHENOMENOLOGICALLY ADJUSTED--- TUNING NECESSARY- : • a) PHYSICS BASED MODELS REQUIRE LESS TUNING • b) EFFICIENT AND ROBUST OPTIMIZATION ALGORITHMS

  3. THE ENERGY TRANSPORT MODELS WITH PHYSICS BASED TRANSPORT COEFFICIENTS • IN THE ENERGY TRANSPORT MODEL IMPLEMENTED IN INDUSTRIAL SIMULATORS THE TRANSPORT COEFFICIENTS ARE OBTAINED PHENOMENOLOGICALLY FROM A SET OF MEASUREMENTS • MODELS ARE VALID ONLY NEAR THE MEASUREMENTS POINTS. LITTLE PREDICTIVE VALUE. • EFFECT OF THE MATERIAL PROPERTIES NOT EASILY ACCOUNTABLE (WHAT HAPPENS IF A DIFFERENT SEMICONDUCTOR IS USED ?): EX. COMPOUDS, SiC, ETC. • NECESSITY OF MORE GENERALLY VALID MODELS WHERE THE TRANSPORT COEFFICIENTS ARE OBTAINED, GIVEN THE MATERIAL MODEL, FROM BASIC PHYSICAL PRINCIPLES

  4. ENERGY BAND STRUCTURE IN CRYSTALS • Crystals can be described in terms of Bravais lattices • L=ia(1)+ja(2)+la(3)i,j,l  • with a(1), a(2) ,a(3) lattice primitive vectors

  5. EXAMPLE OF BRAVAIS LATTICE IN 2D

  6. Primitive cell

  7. Diamond lattice of Silicon and Germanium

  8. RECIPROCAL LATTICE • The reciprocal lattice is defined by • L^ =ia(1)+ja(2)+la(3)i,j,l  • with a(1) , a(2) , a(3) reciprocal vectors • a(i).a(j) =2ij

  9. Direct lattice

  10. Reciprocal lattice

  11. BRILLOUIN ZONE

  12. FIRST BRILLOUIN ZONE FOR SILICON

  13. BAND STRUCTURE

  14. EXISTENCE OF SOLUTIONS

  15. ENERGY BAND AND MEAN VELOCITY

  16. PARABOLIC BAND APPROXIMATION

  17. NON PARABOLIC KANE APPROXIMATION

  18. DERIVATION OF THE BTE

  19. THE COLLISION OPERATOR

  20. FUNDAMENTAL DESCRIPTION: • The semiclassical Boltzmann transport for the electron distribution function f(x,k,t) • tf +v(k).xf-qE/h kf=C[f] • the electron velocity • v(k)=k(k) • (k)=k2/2m* (parabolic band) • (k)[1+(k)]= k2/2m* (Kane dispersion relation) • The physical content is hidden in the collision operator C[f]

  21. PHYSICS BASED ENERGY TRANSPORT MODELS • STANDARD SIMULATORS COMPRISE ENERGY TRANSPORT MODELS WITH PHENOMENOLOGICAL CLOSURES : STRATTON. • OTHER MODELS (LYUMKIS, CHEN, DEGOND) DO NOT START FROM THE FULL PHYSICAL COLLISION OPERATOR BUT FROM APPROXIMATIONS. • MAXIMUM ENTROPY PRINCIPLE (MEP) CLOSURES (ANILE AND MUSCATO, 1995; ANILE AND ROMANO, 1998; 1999; ROMANO, 2001;ANILE, MASCALI AND ROMANO ,2002, ETC.) PROVIDE PHYSICS BASED COEFFICIENTS FOR THE ENERGY TRANSPORT MODEL, CHECKED ON MONTE CARLO SIMULATIONS. • IMPLEMENTATION IN THE INRIA FRAMEWORK CODE (ANILE, MARROCCO, ROMANO AND SELLIER), SUB. J.COMP.ELECTRONICS., 2004

  22. DERIVATION OF THE ENERGY TRANSPORT MODEL FROM THE MOMENT EQUATIONS WITH MAXIMUM ENTROPY CLOSURES • MOMENT EQUATIONS INCORPORATE BALANCE EQUATIONS FOR MOMENTUM, ENERGY AND ENERGY FLUX • THE PARAMETERS APPEARING IN THE MOMENT EQUATIONS ARE OBTAINED FROM THE PHYSICAL MODEL, BY ASSUMING THAT THE DISTRIBUTION FUNCTION IS THE MAXIMUM ENTROPY ONE CONSTRAINED BY THE CHOSEN MOMENTS.

  23. SILICON MATERIAL MODEL

  24. MOMENT EQUATIONS

  25. THE MOMENT METHOD APPROACHTHE LEVERMORE METHOD OF EXPONENTIAL CLOSURES

  26. LEVERMORE’S CLOSURE ANSATZ:

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