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This document explores the noise implications of SiPM and the integration parameters for ASIC performance, including details on synchronous channels, buffer depth, spill structure, chip time structure, and more. It provides examples of noise impact and suggests mitigating factors to optimize performance.
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SiPM Noise Implications(revised) Alfons Weber CCLRC/RAL
TRIP-t Parameters • 32 synchronous channels • Integration window • 50 nsec to many μsec • reset time 50 nsec • Buffer depth • 48 deep analogue pipeline • 24 readable
5.17µs 5.17µs 5.17µs 3.53s 3.53s 58ns 58ns 58ns 58ns 58ns 58ns 58ns 58ns 58ns 581ns 581ns 581ns 581ns 581ns 581ns 581ns 581ns Spill Structure Spill Structure • ASIC will work for any number of batches • < 24 batches • separation > 100 nsec Bunch Structure Chip Time Structure integration reset
Basic Performance • TRIP-t • Integrate charge for 270 nsec • Reset integrator for 50 nsec • Repeat above for up to 24 cycles • Timestamp • Use discriminator signal of integrated charge • Threshold between 0.5-3 pe • Charge readout • Integrated charge can be read-out without threshold • SiPM noise implications • No dead-time during integration cycles • Noise over real signal • Fake timestamp
Examples • 3 MHz of noise above 0.5 PE • probability to have a noise hit (ADC)3 MHz * 270 nsec = 80% • 30 kHz of noise above 2.5 PE • Probability to have noise hit (TDC) 30 KHz * 270 nsec = 0.8% • Mitigating factor • Could reduce integration window to 100 nsec • SiPMs are probably not that noisy • Multi-PE fraction may/will depend on integration time