Testbed for Plasma-Wall and Etch Product Studies SFR Workshop May 24, 2001 Matthew Radtke, John Coburn, David Graves Berkeley, CA 2001 GOAL: Construction and testing of apparatus for etching and etch byproduct studies by 9/30/2001.
Motivation • Etch products often play major role in etch chemistry • System designed to study role of etch products. • Plasma and surface diagnostics combined. • Model studies require data: system measures all neutral and ionic species impacting surfaces. • N2 and Ar/c-C4F8 plasma diagnostics reported.
Diagnostics * mass spectrometer measurements are at wall * Langmuir probe can measure profile
Illustration of Diagnostics: N2 plasma
Neutral Densities: Ar/c-C4F8 plasma • Radical densities from APMS
Ion Densities and Langmuir probe measurements: Ar/c-C4F8 plasma * Morgan, L. (2000) - theoretical C4F8 total dissociation cross section calculation
Studies of plasma-wall interactions (e.g. Si/O/Cl for gate/trench etch) Studies of new high-K and gate stack etching (e.g. etch precursors, by-products, selectivity) Studies of plasma surface interactions (e.g. N2 plasma: PET; NF3 plasma: elastomer) 2002-2003 Milestones