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教授：陳文山 學生：林晏羽 班級：碩研電子一甲 學號： 9930228

教授：陳文山 學生：林晏羽 班級：碩研電子一甲 學號： 9930228.

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教授：陳文山 學生：林晏羽 班級：碩研電子一甲 學號： 9930228

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  1. 教授：陳文山學生：林晏羽班級：碩研電子一甲學號：9930228教授：陳文山學生：林晏羽班級：碩研電子一甲學號：9930228 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  2. EVOLUTION OF RFIC HANDSET PAS

  3. 手機業務增長/預計增長2002年至2013 圖 1。手機手機部門的增長，較去年同期預測全球（百萬）。 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  4. Requirements for Power Amplifiers THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  5. Semiconductor Technologies for RF Integrated Circuit Handset PAs • 1.III - V族化合物為基礎的技術和矽為基礎 • 2. MESFET • 3. PHEMT • 4. HBT 半導體技術可用於PA的應用： 砷化鎵（GAAS）優點： • 1.高擊穿電壓 • 2.高增益 • 3.線性度好 • 4.加強PAE的高產量Vcc THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  6. Semiconductor Technologies forRF Integrated Circuit Handset Pas THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  7. Handset Power Amplifier DesignMethodologies and ArchitecturesSaturated Power Amplifi er DesignMethodologies and ArchitecturesPower Amplifier Design Methodology Match HBT PA Match COMS Conroller HBT PA Match Match 圖2.方塊圖，四組頻帶GSM / GPRS功率放大器。CMOS控制器提供直流偏置，邏輯控制，功率控制的兩條平行異質結雙極晶體管。阻抗匹配電路用於輸入和輸出的放大器。

  8. Vcc RFin RFout Vapc Automatic Bas Controller 圖 3.方塊圖三個階段功率放大器。第一階段提供線性增益，第二階段提供足夠的功率來驅動第三階段為飽和模式操作。 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  9. 圖 4.顯微照片一個四頻的SiGe HBT功率放大器。這樣的設計集成了控制階段和擴增階段在一個芯片上。 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  10. Saturated Power Amplifier Design Architectures 兩個主要的架構是使用在GSM功率放大器，一個是可變增益，另一種是固定增益架構。在可變增益架構，[功率放大器有固定的輸入功率，通常由一個壓控振盪器（VCO），輸出功率為通過改變增益功率放大器通過偏置控制。 Vbat Ramp PAC Vcc PA 圖 5.電流控制，可變增益電路。調整後的增益是通過改變偏壓的感應電流在輸出。 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  11. Vbat Ramp PAC Vcc PA 圖 6。電壓控制，可變增益電路。集電器的電壓是感覺到的，以及一系列FET的電壓調整設置集電電壓。 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  12. Linear Power AmplifierDesign and Its Architecture VREF Vcc1 VCONT Vcc1 Power Stage Bias Driver Stage Bias lnter Stage Match Lnput Match Output Match DA DA RFOut RFln MMIC Module 圖 7.簡化的兩階段線性功率放大器手機框圖。第一階段由一個驅動放大器（大），其次是功率放大器 GND GND THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  13. Matching Circuit Load Camier Peak λµ Transformer 圖 8.一系列的簡化結構型功率放大器Doherty輸出載波信號分離和通過路徑1和路徑2，結合在負載。 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  14. M ·ZLoad （A） o Zo90 Q1 M ·ZLoad M ·ZLoad M -1 ZLoad Q2 Load THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  15. 2 M ·ZLoad o Zo90 Q1 M ·ZLoad (Open) 8 ZLoad Q2 Load 圖 9.一種簡化結構的開關 的功率放大器。 （A）高功率模式。 （B）低功耗模式。 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  16. 圖 11。測得的功率附加效率（PAE）和相鄰信道功率比（ACPR）在5 MHz偏移使用寬帶分碼多工存取計劃（3GPP的WCDMA的rel.99）。載波頻率為836.5MHz 圖 10。測量的功率附加效率的系列型功率放大器（實線）相比，一個典型的AB類功率放大器（虛線）。 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  17. Vd2 Point 2 Id2 Vd1 SW2 O/M Point 2 Vc1 Id1 Q2 Vc1 I/M O/M Point 1 Q1 Pin I/M Additional Matching Point 1 圖 12.框圖步階功率放大器。開關是用來改變功率放大器周邊設備。 I / M：輸入匹配。O/M：輸出匹配 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  18. 圖 13.示意圖的開關負載不敏感的功率放大器。該裝置周圍是改變部分關閉輸出單元。 Y1 Vcc Y2 ldc Feed and Harmonics Tuning dc Feed dc Feed dc Feed Vcc 0 +45 Phase Lnput Matching lnter Stage Matchin -45 Phase 0 MMIC 6-10Ω RFln 0 dc Block -45 Phase Lnput Matching lnter Stage Matchin +45 Phase Bias Circuit First Stage Bias Circuit Second Stage 0 Switch Switch Vcc 50Ω ldc Feed and Harmonics Tuning 20-25Ω dc Feed dc Feed dc Feed Vctrl Y1 Vctrl Y1 Y1 Vcc Y2 Vcc

  19. VCC1A VCC1B High-Power Amplifier Chain Match Circuit ln DA1 PA1 S/W CNTL Biss CNTL Biss Circuits Vmode Match Circuit Match Circuit DA2 PA2 MMIC Low-Power Amplifier Chain VCC2A 圖 15.示意圖並聯功率放大器 VCC2B

  20. 圖14.測量ACPRI和ACPR2和PAE為低（LM）和高（hm）的功率模式在載波頻率為1880MHz的步階功率放大器。圖14.測量ACPRI和ACPR2和PAE為低（LM）和高（hm）的功率模式在載波頻率為1880MHz的步階功率放大器。 圖16.測量增益和功率增加為低效率（PAE）和高功率模式在載波頻率為1880MHz的電路如圖15所示。 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  21. Future Handset PAsMultimode and Multiband PAs DCS/PCS WCDMA HB High Band WCDMA HB WCDMA HB Control CMOS Power Detection SPl Vdes WCDMA HB Low Band WCDMA HB GSM/EGSM 圖 17.單一路徑，多模功率放大器架構。開關是用來改變不同的解調器電路 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

  22. Summary • 由於功率放大器在手機使用手機電池供電操作，高PAE是必不可少的電池壽命。同樣重要的是對熱管理在手機上。線性是關鍵3G的應用或超越。此外，成本，尺寸和可靠性也非常重要的考慮因素。III - V複合技術在今天仍然佔主導地位的手機市場，由於其優越的性能，如PAE的，線性度和耐用性。矽CMOS技術是在追趕。進一步的性能改進和更新穎的設計方法都需要置換優勢的III - V族化合物的技術。矽材料製成的技術提供了很好的解決方案的單芯片集成。矽的CMOS多模/多頻段手工訂功率放大器可提供移動電話製造商以最低成本，最小尺寸，大多數的功能。巴勒斯坦權力機構最終可能會集成收發器和基帶芯片，以進一步縮小體積，降低成本。

  23. 圖18.GSM功率放大器模塊 圖19.WCDMA功率放大器模塊 THIS PAPER APPEARS IN: MICROWAVE MAGAZINE,IEEE .ISSUE DATE :FEB.2010 .VOLUME :11,ISSUE:1 .ON PAGE(S):60-69 .INSPEC ACCESSION NUMBER:11148040 .DIGITAL OBJECT IDENTIFIER :10.1109/MMM.2009.935214 .DATE OF CURRENT VERSION :29 一月 2010 .SPONSORED BY :IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY

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