CONCLUSION
This study explores the impact of a p-AlGaN electron-blocking layer (EBL) on the efficiency droop of InGaN/GaN multi-quantum well (MQW) light-emitting diodes (LEDs). At low current densities, LEDs featuring an EBL exhibit a higher external quantum efficiency (EQE) compared to those without. However, at high current density, the opposite is true, with a notable 5.6% and 8.6% increase in EQE for LEDs without the EBL at 90 A/cm². The enhanced performance of these LEDs is linked to improved hole injection efficiency, particularly at elevated currents.
CONCLUSION
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Presentation Transcript
CONCLUSION • We investigated the effect of the p-AlGaNEBL on efficiency droop in InGaN/GaN MQW LEDs. • At low current density, LEDs with an EBL show a higher EQE than LEDs without an EBL. However, LEDs without an EBL show a higher EQE at high current density. • The increment in EQE for LEDs without an EBL is 5.6% and 8.6% at 90 A/cm2, compared to LEDs with a p-Al0.22GaN and a p-Al0.32GaN EBL, respectively. • The suppression of efficiency droop in LEDs without an EBL at high current density is attributed to an increased hole injection efficiency.
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