The Melbourne Node

1. M A R C Microanalytical Research Centre The Melbourne Node

2. Node Manager: Steven Prawer Test structures created by single ion implantation Atom Lithography and AFM measurement of test structures Theory of Coherence and Decoherence The Melbourne Node

3. The Melbourne Node Node Team Leader: Steven Prawer Test structures created by single ion implantation Atom Lithography and AFM measurement of test structures Theory of Coherence and Decoherence

4. Students Paul Otsuka MatthewNorman Elizabeth Trajkov Brett Johnson Amelia Liu* Leigh Morpheth David Hoxley* Andrew Bettiol Deborah Beckman Jacinta Den Besten Kristie Kerr Louie Kostidis Poo Fun Lai Jamie Laird Kin Kiong Lee Academic Staff David Jamieson Steven Prawer Lloyd Hollenberg Postdoctoral Fellows Jeff McCallum Paul Spizzirri Igor Adrienko +2 Infrastructure Alberto Cimmino Roland Szymanski William Belcher Eliecer Para Key Personnel • Geoff Leech* DeborahLouGreig • Ming Sheng Liu • Glenn Moloney • Julius Orwa • Arthur Sakalleiou • Russell Walker • Cameron Wellard*

5. Existing Infrastructure • NEC 5U Pelletron accelerator with RIEF funded upgrade to make it one of the brightest accelerators in the world for nuclear microprobe operation ($2,000,000+) • Two MeV ion microprobe beam lines and associated instrumentation ($1,000,000 each) • Dilor confocal Raman spectrometer ($500,000) • Joel UHV AFM ($700,000) • Distributed computer network ($100,000). • Pulsed Laser Deposition System ($1,000,000) • This combination of instruments is unique worldwide for one research Centre!

6. The Science • Creation of an array of phosphorous ions ina Si m

7. The Melbourne Pelletron Accelerator • Installed in 1975 for nuclear physics experiments. • National Electrostatics Corp. 5U Pelletron. • Now full time for nuclear microprobe operation. • Will be state-of-the-art following RIEFP upgrade • Capable of delivering a single ion into an area 0.25 mm in diameter Accelerator Specimen Chamber

8. JEOL Variable Temperature UHV AFM/STM • Imaging RT-800K • Cantilever based AFM • STM imaging with tip or AFM cantilever • All imaging modes available • In situ evaporation source. • In situ ion sputtering.

9. Au deposited in-situ on Si (111) surface Si (111) 2 x 1 surface obtained by cleavage in UHV 2 x 1 reconstruction from Haneman and Adrienko Atom Lithography: Key Imaging & Fabrication Technology

10. 20 nm Programmed Lithography for nanofabrication 100 x 100 nm 1 atom deep, 10 atoms wide Alberto Cimmino leaves his mark

11. 1nm AFM imaging of surfaces: Atomic Force Microscope Image of Si 7 x 7 surface reconstruction. Each dot is a single Si atom.

12. Test structures created by single ion implantation • The basic idea • Previous work • Potential problems and solutions

13. Single Ion Implantation Fabrication Strategy Etch latent damage& metallise Read-out state of “qubits” MeV 31P implant Resist layer Si substrate

14. Light ion etch pits Heavy ion etch pit Scale bars: 1 mm intervals MeV ion etch pits in track detector • Single MeV heavy ions are used to produce latent damage in plastic • Etching in NaOH develops this damage to produce pits • Light ions produce smaller pits 3. Etch 2. Latent damage 1. Irradiate From: B.E. Fischer, Nucl. Instr. Meth. B54 (1991) 401.

15. Single ion tracks • Latent damage from single-ion irradiation of a crystal (Bi2Sr2CaCuOx) • Beam: 230 MeV Au • Lighter ions produce narrower tracks! Depth 1 mm 3 mm 5 mm 7.5 mm 3 nm From Huang and Sasaki, “Influence of ion velocity on damage efficiency in the single ion target irradiation system” Au-Bi2Sr2CaCu2Ox Phys Rev B 59, p3862

16. Project Management - A distributed system Director Clark Deputy Director Milburn Readout Theory/Modelling Array fabrication SET Dzurak Magnetic Resonance (LANL) Quantum Optics Rubeinstein-Dunlop Atom Lithography Prawer Silicon MBE Simmons Single Ion Implantation Jamieson

17. Potential Problems