1 / 16

微細放電加工學期末報告

開發放電銑削及雕模放電加工陶瓷零件之技術和策略. 微細放電加工學期末報告. Development of Technology and Strategies for the Machining of Ceramic Components by Sinking and Milling EDM. 班級:碩研機械一甲 學號: M9910104 姓名:陳泓錡 授課老師:戴子堯 博士 日期: 2011/5/30. 大綱. 實驗目的 探討 加工參數 案例研究 結論. 實驗目的.

amiel
Download Presentation

微細放電加工學期末報告

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. 開發放電銑削及雕模放電加工陶瓷零件之技術和策略開發放電銑削及雕模放電加工陶瓷零件之技術和策略 微細放電加工學期末報告 Development of Technology and Strategies for the Machining of Ceramic Components by Sinking and Milling EDM 班級:碩研機械一甲 學號:M9910104 姓名:陳泓錡 授課老師:戴子堯 博士 日期:2011/5/30

  2. 大綱 • 實驗目的 • 探討加工參數 • 案例研究 • 結論

  3. 實驗目的 • 利用放電銑削及雕模放電方式,加工低導電率之陶瓷材料碳化矽(SiC)、碳化硼(B4C)及氮化矽加氮化鈦複合陶瓷(Si3N4-TiN),並在各參數下探討其兩種方式之差異性,再比較放電銑削加上雕模放電加工與只使用放電銑削加工或雕模放電加工之差異性。

  4. 對陶瓷材料碳化矽(SiC) 之放電銑削加工參數 圖1Milling EDM of SiC.

  5. 探討碳化硼(B4C)之加工參數 表1DoE process parameters for B4C 圖2Relative effect of significant M-EDM processparameters for B4C.

  6. 探討氮化矽加氮化鈦複合陶瓷(Si3N4-TiN)之加工參數探討氮化矽加氮化鈦複合陶瓷(Si3N4-TiN)之加工參數 表2DoE process parameters for Si3N4-TiN 表2 圖3Relative effect of significant M-EDM processparameters for Si3N4-TiN.

  7. 探討不同材料移除率之最佳化加工參數 表3Process parameters for roughing SiC, B4C andSi3N4-TiN by milling EDM.

  8. 對碳化矽(SiC)之 M-EDM與S-EDM 比較測試之 參數設定 表4 Generator settings for comparison tests (M-EDMand S-EDM) for SiC and B4C. 圖4Comparison: M-EDM and S-EDM for SiC.

  9. 對碳化硼(B4C)之 M-EDM與S-EDM 比較測試之 參數設定 表4 圖5 Comparison: M-EDM and S-EDM for B4C.

  10. 對Si3N4-TiN之 M-EDM與S-EDM比較測試之 參數設定 表5Generator settings for comparison tests (M-EDMand S-EDM) for Si3N4-TiN 圖6Comparison: M-EDM and S-EDM for Si3N4-TiN.

  11. Si3N4-TiN之表面品質 surface quality remains poor( 4.3 μm Ra, 10 μm thick recast layer and micro cracks of more then 40 μ m deep) 圖7 Surface quality of Si3N4-TiN samples

  12. 案例研究 圖8Industrial example: spray nozzle(B4C)

  13. 組合策略 圖9 Strategies for the machining of the nozzleceramic component

  14. 結論 由實驗中發現,放電銑削可有效地在低導電之陶瓷材料上銑削出非常小的窗形形狀,比較放電銑削及雕模放電於此三種陶瓷之材料移除率及表面品質狀況,可以發現放電銑削於碳化矽及碳化硼陶瓷之材料移除率及表面品質是較佳的,而雕模放電於氮化矽加氮化鈦複合陶瓷中可以快速加工模穴但表面品質非常差,另外作者也提出先利用放電銑削進行粗加工再利用雕模放電進行精加工,可以比單純只使用雕模放電加工減少一半的時間。

  15. 參考文獻 [1]B. Lauwers, J. P. Kruth, K. Brans, “Development of Technology and Strategies forthe Machining of Ceramic Components by Sinking and Milling EDM”,Annalsofthe CIRP, Vol.56, pp.225-228, 2007 [2]張勝祥,”利用微細放電法加工絕緣陶瓷之研究”, 國立雲林科技大學機械工程研究所碩士論文,2008 年

  16. Thank you for your listening

More Related