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Y. Zhang, E. E. Mendez, and X. Du, to appear in ACS Nano, 2011 PowerPoint Presentation
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Low-frequency Noise in Graphene Field-effect Transistors Emilio E. Mendez, SUNY at Stony Brook University, DMR 0705131.

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Low-frequency Noise in Graphene Field-effect TransistorsEmilio E. Mendez, SUNY at Stony Brook University, DMR 0705131

The unique properties of graphene open the door to its application in electronics, but electrical noise poses a practical limit on how small an input signal can be in graphene devices. Understanding low-frequency noise is crucial to improve the performance of circuits based on them.

Mendez’s group is studying how material imperfections in graphene transistors affect their electrical noise. They have found that not only is noise affected by the amount of disorder caused by those imperfections but by the kind of disorder as well. The group has also found that “suspended” transistors, free from their imperfection-causing substrates, exhibit electrical noise significantly lower than in most traditional electronic materials.

Resistance and low-frequency noise in a

non-suspended graphene transistor as a

function of the voltage applied to its gate.

In this case the noise is dominated by

short-range disorder, whose signature is

a monotonic increase of noise with

increasing gate voltage.

Y. Zhang, E. E. Mendez, and X. Du, to appear in ACS Nano, 2011

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Low-frequency Noise in Graphene Field-effect TransistorsEmilio E. Mendez, SUNY at Stony Brook University, DMR 0705131

Prof. Mendez’s group has used extensively the facilities of the Center for Functional Nanomaterials (CFN) at BNL for graphene-device fabrication.

He has enlisted several CFN’s staff members who are expert on energy-related research to teach some modules of an undergraduate seminar course on Energy and Climate he has recently developed. A large fraction of the students taking the course are part of Stony Brook’s Women in Science and Engineering Program.