Relation between Microstructure and Electrical Performance

1. RELATION BETWEEN MICROSTRUCTURE AND ELECTRICAL PERFORMANCE Microstructure refers to the arrangement of grains, phases, and defects within a material at a microscopic level. It plays a crucial role in determining the physical, mechanical, and electrical properties of the material. By examining the microstructure of a material, researchers can gain valuable insights into its behaviour under different conditions.

2. HTR-1 High Temperature Resistivity Measurement System 1. System Description For steels and other materials, the resistivity is very sensitive to the atom diffusion during tempering. Through the resistance temperature dependent characters, the system can accurately capture a series of continuous transformation such as atoms moving from interstitial position to dislocation, interface enrichment and nucleation, and precipitation from the matrix. These explain the diffusion kinetics from the perspective of carbon atom diffusion activation energy. However, the in-situ characterization of subtle resistance value is still a challenge. 2. Parameters Temperature temperature~1000℃, accuracy:: 1℃. controller:30 heating modes; Room Vacuum degree: 6*10^-2Pa. Data acquisition range : 1×10^-7～1×10^1 Ω and accuracy: 0.1uΩ. Standard samples: 1mΩ、10mΩ、100mΩ, uncertainty: 0.05%, temperature cofficient of resistance: 3ppm. 3. Software function: save and manage the data with ACCESS.

3. HR-1 Profile Alloy Resistivity Measurement System 1. System description For copper alloy and other materials, the resistivity is very sensitive to the atom diffusion during tempering. Through the resistance temperature dependent characters, the system can accurately capture a series of continuous transformation such as atoms moving from interstitial position to dislocation, interface enrichment and nucleation, and precipitation from the matrix. These explain the diffusion kinetics from the perspective of carbon atom diffusion activation energy. However, the in-situ characterization of subtle resistance value is still a challenge. 2. Parameters Temperature temperature measurement; accuracy: ±0.2℃. controller:30 heating modes; Room

4. Vacuum degree: 6*10^-2Pa. Data acquisition range : 1×10^-7～1×10^1 Ω and accuracy: 0.1uΩ. Standard samples: 1mΩ、10mΩ、100mΩ, uncertainty: 0.05%, temperature cofficient of resistance: 3ppm. 3. Software function: save and manage the data with ACCESS. SMA-1 Shape Memory Alloy Dynamic Characteristics Measurement System 1. System description Shape memory alloy (SMA) has excellent characteristics of noiseless driving, high power to weight ratio, integrated driving and so on. Combined with the structural

5. transformation of materials in the driving process, the relationship between stress-strain, temperature resistance, strain resistance and martensitic transformation are measured and analyzed in the thermal driving & measurement system. 2. Parameters 1.Temperature controller:-40~150℃, accuracy: ±0.2℃. 2.Stress measurement accuracy ± 0.1g, displacement measurement accuracy ± 1um.. 3.Data acquisition unit range and accuracy : 1×10^- 7～1×10^2 Ω,1uΩ. 1Ω、10Ω、100Ω, 4.Standard samples: accuracy 0.05%,3ppm. 5.Synchronously measure the stress and strain, phase change resistance, phase change temperature, fatigue and other wire properties.

6. CONTACT US Website: www.szmicros.com Email I’d:jinfeng.zhang@sipcc.com.cn Phone No: (086) 13338002060 Address: No.199 Xinggang Street, Suzhou Industrial Park