- 879 Views
- Uploaded on

Download Presentation
## FinFETs: From Circuit to Architecture

**An Image/Link below is provided (as is) to download presentation**

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.

- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -

Presentation Transcript

### FinFETs: From Circuit to Architecture

Talk Outline

Niraj K. Jha

Dept. of Electrical Engineering

Princeton University

Joint work with: Anish Muttreja, Prateek Mishra, Chun-Yi Lee, Ajay Bhoj and Wei Zhang

Talk Outline

- Background
- Low Power FinFET Circuits
- Unusual Logic Styles
- Unusual Dual-Vdd/Dual-Vth Circuits
- Architectural Impact
- Other Ongoing Work
- Conclusions

Why Double-gate Transistors ?

10 nm

Feature size

- DG-FETs can be used to fill this gap
- DG-FETs are extensions of CMOS
- Manufacturing processes similar to CMOS
- Key limitations of CMOS scaling addressed through
- Better control of channel from transistor gates
- Reduced short-channel effects
- Better Ion/Ioff
- Improved sub-threshold slope
- No discrete dopant fluctuations

32 nm

Bulk CMOS

DG-FETs

Non-Si nano devices

Gap

What are FinFETs?

- Fin-type DG-FET
- A FinFET is like a FET, but the channel has been “turned on its edge” and made to stand up

Back Gate

Independent-gate FinFETs- Both the gates of a FET can be independently controlled
- Independent control
- Requires an extra process step
- Leads to a number of interesting analog and digital circuit structures

FinFET Width Quantization

- Electrical width of a FinFET with n fins: W = 2*n*h
- Channel width in a FinFET is quantized
- Width quantization is a design challenge if fine control of transistor drive strength is needed
- E.g., in ensuring stability of memory cells

FinFET structure

Ananthan, ISQED’05

Talk Outline

Background

Low Power FinFET Circuits

Unusual Logic Styles

Unusual Dual-Vdd/Dual-Vth Circuits

Architectural Impact

Other Ongoing Work

Conclusions

Motivation: Power Consumption

- Traditional view of CMOS power consumption
- Active mode: Dynamic power (switching + short circuit + glitching)
- Standby mode: Leakage power
- Problem: rising active leakage
- 40% of total active mode power consumption (70nm bulk CMOS) †

†J. Kao, S. Narendra and A. Chandrakasan, “Subthreshold leakage modeling and reduction techniques,” in Proc. ICCAD, 2002.

Logic Styles: NAND Gates

IG-mode NAND

SG-mode NAND

IG-mode

pull up

pull up bias voltage

LP-mode NAND

IG/LP-mode NAND

LP-mode

pull down

pull down bias voltage

Comparing Logic Styles

†Average leakage current for two-input NAND gate (Vdd = 1.0V)

FinFET Circuit Power Optimization

Construct FinFET-based Synopsys technology libraries

Extend linear programming based cell selection† for FinFETs

Use optimized netlists to compare logic styles at a range of delay constraints

32 nm PTM

FinFET models

FinFET models

(UFDG, PTM)

32 nm PTM

inFET models

Logic gate

designs

Logic gate

designs

Delay/power

characterization in

SPICE

Benchmark

Minimum-delay

synthesis in

Design Compiler

SG-mode

netlist

IG

SG

Synopsyslibraries

Power-optimized mixed-mode netlists

IG/LP

LP

SG+

IG/LP

SG+LP

Linear programming

based cell selection

SG+IG

†D. Chinnery and K. Keutzer, “Linear programming for sizing, Vdd and Vt assignment,” in Proc. ISLPED, 2005.

Power Consumption of Optimized Circuits

Estimated total power consumption for ISCAS’85 benchmarks

Vdd = 1.0V, α = 0.1, 32nm FinFETs

Available modes

- Leakage power savings
- 110% a.t. (68.5%)
- 120% a.t. (80.3%)

- Total power savings
- 110% arrival time (a.t.) (34%)
- 120% a.t. ( 47.5%)

Talk Outline

Background

Low Power FinFET Circuits

Unusual Logic Styles

Unusual Dual-Vdd/Dual-Vth Circuits

Architectural Impact

Other Ongoing Work

Conclusions

Dual-Vdd FinFET Circuits

Conventional low-

power principle:

1.0V Vdd for critical logic, 0.7V for off-critical paths

Our proposal: overdriven gates

Overdriven FinFET gates leak a lot less!

Overdriven inverter

Higher Vth

Reverse bias

Vgs=+0.08V

1.08V

1V

Leakage current

Vin

Vth Control with Multiple Vdd’s (TCMS)

Symmetric

threshold control for P and N

VddH

VddL

TCMS buffer

- Using only two Vdd’s saves leakage only in P-type FinFETs, but not in N-type FinFETs
- Solution
- Use a negative ground voltage (VHss) to symmetrically save leakage in N-type FinFETs

VssH

VssL

Exploratory Buffer Design

Size of high-Vdd inverters kept small to minimize leakage in them

Wire capacitances not driven by high-Vdd inverters

Output inverter in each buffer overdriven and its size (and switched capacitance) can be reduced

VLdd

VLdd

VHdd

VHdd

i’

i

S1

S1

lopt

S2

S2

VLss

VLss

VHss

VHss

Power Savings

- Benchmarks are nets extracted from real layouts and scaled to 32nm

http://dropzone.tamu.edu/~zhouli/GSRC/fast_buffer_insertion.html

Fin-count Savings

Transistor area is measured as the total number of fins required by all buffers

TCMS can save 9% in transistor area

TCMS Extension

Delay-minimized netlist

Power : 283.6uW

Area: 538 fins

Power-optimized netlist

Power : 149.9uW

Area: 216 fins

Background

Low Power FinFET Circuits

Unusual Logic Styles

Unusual Dual-Vdd/Dual-Vth Circuits

Architectural Impact

Other Ongoing Work

Conclusions

Orion-FinFET

- Extends ORION for FinFET-based power simulation for interconnection networks
- FinFET power libraries for various temperatures and technologies nodes
- Power breakdown of interconnection networks for different FinFET modes
- Power comparison for different FinFET modes under different traffic patterns

Power Breakdown for SG/LP Modes

- 4X4 mesh network: 5 ports/router, 48-flit buffer/port
- Flit width = 128 bits
- Clock frequency = 1GHz

Router power breakdown

Network power breakdown

Bulk CMOS vs. LP-mode FinFETs

- Bulk CMOS simulation: 32nm predictive technology model
- Leakage power of bulk CMOS network 2.68X as compared to an LP-mode FinFET network

Router Leakage Power vs. Temp.

- Leakage power of SG-mode router grows much faster with temp. than for LP-mode
- Leakage power ratio at 105oC: 7:1

Talk Outline

Background

Low Power FinFET Circuits

Unusual Logic Styles

Unusual Dual-Vdd/Dual-Vth Circuits

Architectural Impact

Other ongoing work

Conclusions

FinFET SRAM and Embedded DRAM Design

FinE: Two-tier FinFET simulation framework for FinFET circuit design space exploration:

Sentaurus TCAD+UFDG SPICE model

Quasi Monte-Carlo simulation for process variation analysis

Thermal analysis using ThermalScope

Yield estimation

Variation-tolerant ultra low-leakage FinFET SRAMs at lower technology nodes

Gated-diode FinFET embedded DRAMs

Extension of CACTI for FinFETs

Selection of any of the FinFET SRAM and embedded DRAM cells

Use of any of the FinFET operating modes

Scaling of FinFET designs from 32nm to 22nm, 16nm and 10nm technology nodes

Accurately modeling the behavior of a wide range of cache configurations

FPGA vs. ASICs

- Distributed non-volatile nano RAMs: main storage for reconfiguration bits
- Fine-grain reconfiguration (even cycle-by-cycle) and logic folding
- More than an order of magnitude increase in logic density and area-delay product
- Competitive performance and moderate power consumption
- Non-volatility: useful in low power & secure processing
- NanoMap to map application to NATURE
- Significant area-delay trade-off flexibility

CMOS fabrication

compatible

Nano RAM

on-chip storage

Run-time

reconfiguration

NATURE

Temporal

logic folding

Logic

density

Design

flexibility

Conclusions

- FinFETs a necessary semiconductor evolution step because of bulk CMOS scaling problems beyond 32nm
- Use of the FinFET back gate leads to very interesting design opportunities
- Rich diversity of design styles, made possible by independent control of FinFET gates, can be used effectively to reduce total active power consumption
- TCMS able to reduce both delay and subthreshold leakage current in a logic circuit simultaneously
- Time has arrived to start exploring the architectural trade-offs made possible by switch to FinFETs

Download Presentation

Connecting to Server..