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EE 5340 Semiconductor Device Theory Lecture 27 - Fall 2003 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc n-channel enhancement MOSFET in ohmic region 0< V T < V G Channel V S = 0 0< V D < V DS,sat E Ox,x > 0 e - e - e - e - e - n+ n+ Depl Reg p-substrate

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ee 5340 semiconductor device theory lecture 27 fall 2003

EE 5340Semiconductor Device TheoryLecture 27 - Fall 2003

Professor Ronald L. Carter

ronc@uta.edu

http://www.uta.edu/ronc

n channel enhancement mosfet in ohmic region
n-channel enhancementMOSFET in ohmic region

0< VT< VG

Channel

VS = 0

0< VD< VDS,sat

EOx,x> 0

e-e- e- e- e-

n+

n+

Depl Reg

p-substrate

Acceptors

VB < 0

i v relation for n mos ohmic reg
I-V relation for n-MOS (ohmic reg)

ohmic

ID

non-physical

ID,sat

saturated

VDS

VDS,sat

universal drain characteristic
Universal draincharacteristic

ID

VGS=VT+3V

9ID1

ohmic

saturated, VDS>VGS-VT

VGS=VT+2V

4ID1

VGS=VT+1V

ID1

VDS

implanted n channel enhance ment mosfet ohmic region
Implanted n-channel enhance-ment MOSFET (ohmic region)

0< VT< VG

e- channel ele + implant ion

Channel

VS = 0

0< VD< VDS,sat

EOx,x> 0

n+

n+

e-e- e- e- e-

++++++++++++

Depl Reg

p-substrate

Acceptors

VB < 0

ion implantation

Range

Si & SiO2

Al

Si3N4

DRP

Si

Al & SiO2

Si3N4

Ion implantation*
references
References

* Semiconductor Physics & Devices, by Donald A. Neamen, Irwin, Chicago, 1997.

**Device Electronics for Integrated Circuits, 2nd ed., by Richard S. Muller and Theodore I. Kamins, John Wiley and Sons, New York, 1986