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Miscellaneous. LVDO Regulator Failure. V OUT 3.3V  4.4V Destructive. FRAM Memory Functionality Loss During Total Dose Test.

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Lvdo regulator failure
LVDO Regulator Failure

VOUT 3.3V  4.4V

Destructive


Fram memory functionality loss during total dose test
FRAM Memory Functionality Loss During Total Dose Test

In situ static current measurements of two serial and one parallel FRAM device types. This initial study showed that Rohm (serial) and Ramtron research fab (parallel) devices could withstand moderate doses without significant leakage currents. Post irradiation testing of the FM1608 showed that all devices catastrophically failed. Annealling did not help. In situ functional tests or a step irradiation method are needed for determination of the functional limit. The base CMOS process is not the limiting factor for the FM1608.


Nuetrons
Nuetrons

from Ohlsson, et. al.


Prompt dose generally mil applications we have some data

Prompt DoseGenerally MIL applications;We have some data


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