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Tutorial 7. Derek Wright Monday, March 7 th , 2005. Silicon MOSFETs. Introduction MOS Capacitors MOSFET Structure MOSFET Scaling Gate Dielectrics Gates Junctions and Contacts Alternate MOSFET Structures. Introduction. MOSFETs are a kind of Field Effect Transistor used in digital ICs

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tutorial 7

Tutorial 7

Derek Wright

Monday, March 7th, 2005

silicon mosfets
Silicon MOSFETs
  • Introduction
  • MOS Capacitors
  • MOSFET Structure
  • MOSFET Scaling
  • Gate Dielectrics
  • Gates
  • Junctions and Contacts
  • Alternate MOSFET Structures
introduction
Introduction
  • MOSFETs are a kind of Field Effect Transistor used in digital ICs
    • Use a FET because gate voltage uses less current than BJT’s base current
  • BJT was developed first, and FET was theorized, but impractical
    • Couldn’t make the Field Effect work due to technology constraints at the time
mos capacitor
MOS Capacitor
  • It’s important to understand how a MOS capacitor works:
    • Capacitance is a limiting factor in IC performance
  • Mobile charges in gate
  • Mobile charges in channel (between drain and source)
  • Separated by dielectric (gate oxide)

= capacitor

mos capacitor2
MOS Capacitor
  • http://jas.eng.buffalo.edu/education/mos/mosCap/biasBand10.html
    • Shows how a depletion layer forms
    • The blue charge is what lets current go from source to drain
    • Other good applets on the site
mos capacitor4
MOS Capacitor
  • Capacitance changes with applied voltage
  • Leads to complicated CMOS simulations
  • Can be exploited in some kinds of VCOs (MOS Varactor)
mosfet structure
MOSFET Structure
  • We use a MOS capacitor in inversion mode
  • The minority carriers form the “channel”
  • Ions are implanted on either side of the gate to act as sources of carriers
  • Contacts are put on the diffusions to form the source and drain
  • Carriers go from the source to the drain
mosfet scaling
MOSFET Scaling
  • Reducing the size of MOSFETs in ICs has many benefits:
    • Higher density
    • Higher speed
    • Lower Power
  • It also introduces many problems:
    • Thin gate oxides
    • Short channel effects
    • Higher leakage current
gate dielectrics
Gate Dielectrics
  • Gate thickness scales by 1/ with decreasing device dimensions
  • We’re fast approaching the practical limit of how thin SiO2 gates can get
  • Tunneling can occur causing gate leakage
  • Other problems like hot carriers start to become problematic
gate dielectrics1
Gate Dielectrics
  • We can use a thicker dielectric if it has a higher r
  • These “high-k” dielectrics mean that a given gate voltage will produce a higher E-field
  • Or, a given gate voltage will produce the same E-field with a thicker dielectric layer
gate dielectrics2
Gate Dielectrics
  • Problems with a thin gate:
    • Oxide thickness variation
    • Impurities from poly gate (particularly B)
    • Reliability and lifetime problems
    • High gate current
  • Gate leakage current (VG = 1V):
    • 1pA/cm2 at 3.5 nm
    • 10A/cm2 at 1.5 nm
gate dielectrics4
Gate Dielectrics
  • Solutions to gate problems:
    • Add nitrogen to SiO2
    • Use high-k dielectrics
      • High-k dielectrics must meet a number of criteria
      • Must be thermally stable
      • Good electronic properties
      • Microstructural stability
      • Deposition tools and chemistry
      • Process compatibility
gates
Gates
  • Poly-silicon is used for gates because:
    • Adjustable work function through doping
    • Process compatibility
  • Drawbacks include:
    • It’s a semiconductor, so it forms a depletion layer which adds to the EOT (effective oxide thickness)
    • High resistivity
  • Metal is considered as the successor to poly-silicon gates
junctions and contacts
Junctions and Contacts
  • Other resistances must be less than 10% of the channel resistance (Rchan)
  • Rchan = [(W/L)  (ox/tox (VG – VT)]-1
    • L  Rchan (scaling)
    •   Rchan (new substrates)
    • ox  Rchan (high-k dielectrics)
    • tox Rchan (high-k dielectrics and scaling)
    • VT  (VG – VT)   Rchan (doping)
junctions and contacts1
Junctions and Contacts
  • Contacts connect the metal lines to the source/drain/gate of a MOSFET
  • Contact resistance becomes a problem as geometries shrink
  • This can be partially solved by using silicides:
    • Silicides are metal/silicon alloys with a low resistance
junctions and contacts2
Junctions and Contacts
  • Formation of self-aligned silicides (salicides)
  • Metal is deposited over entire wafer
  • Reacts with exposed silicon
  • Unreacted metal is selectively etched off
alternate mosfet structures
Alternate MOSFET Structures
  • Silicon On Insulator (SOI) wafers eliminate capacitive coupling to the substrate
  • An oxide layer is buried below the transistors, eliminating coupling to the substrate
  • SOI:
    • reduces leakage
    • reduces capacitance
    • higher speed
    • less susceptible to soft errors
alternate mosfet structures1
Alternate MOSFET Structures
  • New technologies for coming years:
    • High-k gate dielectrics
    • Low-k Dielectrics
    • Metal gate electrodes
    • SOI
    • Strained silicon
    • Vertical multi-gate structures
thank you
Thank You!
  • This presentation will be available on the web.
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