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Huai -Yuan Michael Tseng EE C235

Ink-jet printed ZnO nanowire field effect transistors ( APL 91, 043109 2007 ) Self-aligned printing of high-performance polymer thin-film transistors (IEDM 2006) Yong-Young Noh, Xiaoyang Cheng, and Henning Sirringhaus. Huai -Yuan Michael Tseng EE C235. Introduction.

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Huai -Yuan Michael Tseng EE C235

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  1. Ink-jet printed ZnOnanowirefield effect transistors (APL 91, 043109 2007 )Self-aligned printing of high-performance polymer thin-film transistors (IEDM 2006) Yong-Young Noh, Xiaoyang Cheng, and Henning Sirringhaus Huai-Yuan Michael Tseng EE C235

  2. Introduction • Inorganic semiconductor nanowire field effect transistors (NW-FETs) • Low cost printing process • Large area, flexible electronics • But required sub-10um resolution • Difficult to form ohmic contact when print Si NW • Self-aligned inkjet printing technique • Printing of metal oxide NW (ZnO)

  3. Self-aligned inkjet printing 1

  4. Self-aligned inkjet printing 2

  5. Self-aligned inkjet printing 3 cyclohexylbenzene(CHB)

  6. Process • Au lift-off • SAM treatment on Au • Au nanoparticles printed, de-wet • ZnO NW • Chemical vapor deposition on a-plane sapphire substrate • dispersed in IPA/ethylene glycol then inkjet printed • Spin-cast PMMA • Print PEDOT:PSS SAM used = 1H, 1H, 2H,2H-perflourodecanethiol PMMA= polymethylmethacrylate PEDOT:PSS = poly3,4-ethylenedioxithiophene doped with poly-styrene sulfonate

  7. Results Improved by heating With ZnO Without ZnO L=500nm

  8. Conclusion • All solution process ZnO NW FETs were demonstrated, however • Performance limited by contact resistance as can be proved by a longer channel length device (2um) • Could be improved by using lower work function metal nanoparticle or SAM treatment on Au

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