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P. P. P- GaN (7 ×10 17 cm -3 ). P- GaN (7 ×10 17 cm -3 ). In 0.2 Ga 0.8 N / p- GaN MQW. 0.2um. 0.2um. In 0.2 Ga 0.8 N / p- GaN MQW. 20nm. n- GaN. n- GaN. N. N. three of middle : p- GaN barriers. undoped nucleation GaN. undoped nucleation GaN. 4.5um. 4.5um.

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Sapphire

P

P

P-GaN

(7 ×1017 cm-3)

P-GaN

(7 ×1017 cm-3)

In0.2Ga 0.8N / p-GaN MQW

0.2um

0.2um

In0.2Ga 0.8N / p-GaN MQW

20nm

n-GaN

n-GaN

N

N

three of middle:

p-GaN barriers

undoped nucleation GaN

undoped nucleation GaN

4.5um

4.5um

sapphire

sapphire

n-Al 0.07Ga 0.93N HBL

(5×1018 cm-3 )

(5×1018 cm-3 )

50nm

50nm

structure C

structure D

Fig. 1. LEDs with p-type doped barriers but without an EBL (structure C),

and non-EBL LEDs with p-type doped barriers and a HBL (structure D).


Sapphire

Structure A、B、C、D結構差異表


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