Proximity effect in ebl by abhay kotnala january 2013
Download
1 / 12

Proximity Effect in EBL by: Abhay Kotnala January 2013 - PowerPoint PPT Presentation


  • 92 Views
  • Uploaded on

Electrical and Computer Engineering Department University of Victoria. Proximity Effect in EBL by: Abhay Kotnala January 2013. Outline Introduction Proximity Effect: A Physical Insight Proximity Effect:Avoidance & Correction Conclusion References. Introduction.

loader
I am the owner, or an agent authorized to act on behalf of the owner, of the copyrighted work described.
capcha
Download Presentation

PowerPoint Slideshow about ' Proximity Effect in EBL by: Abhay Kotnala January 2013' - zahir-melendez


An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -
Presentation Transcript
Proximity effect in ebl by abhay kotnala january 2013

Electrical and Computer Engineering Department

University of Victoria

Proximity Effect in EBL

by:

AbhayKotnala

January 2013


Outline

  • Introduction

  • Proximity Effect: A Physical Insight

  • Proximity Effect:Avoidance& Correction

  • Conclusion

  • References


Introduction
Introduction

  • “Encyclopaedia Britannica on head of a pin”

  • Proximity Effect is inherent problem associated with EBL

  • Studied extensively theoretically and experimentally


The proximity effect is the change in feature size of pattern as a consequence of non uniform exposure in regions adjacent to those addressed by the electron beam

Proximity Effect

Pattern affected by proximity (left), After elimination of proximity effect (Right)


Consequences
Consequences pattern as a consequence of non uniform exposure in

  • Limits the resolution of EBL

  • Imposes restriction on the size and shape of the structures

  • Other Effects

    • Corners in the desired pattern become rounded

    • Gap spacing and line width are modified

    • Features may merge together or disappear completely


Electron interactions a physical insight
Electron pattern as a consequence of non uniform exposure in Interactions:A Physical Insight

  • Electron enter the resist and penetrate further into the substrate

  • Types

    • Forward Scattering

    • Backward Scattering


Continued
Continued pattern as a consequence of non uniform exposure in

  • Forward Scattering

    • Inelastic scattering

    • Small Scattering angle

    • Widening of the electron beam

    • Small contribution to proximity effect

  • Backscattering

    • Elastic scattering

    • Large scattering angle

    • Additional exposure to the resist in adjacant areas

    • Large contribution to proximity effect


Proximity effect revisited
Proximity pattern as a consequence of non uniform exposure in Effect(Revisited)

  • Direct consequence of Electron Scattering

  • Nonuniform distribution of actually receieved exposure by the incident electron beam

  • Two types of proximity effect

    • Intraproximity Effect

    • Interproximity effect


Avoidance and correction
Avoidance and Correction pattern as a consequence of non uniform exposure in

  • Improved/Optimized Mask Design

  • Optimize Exposure and Development condition

  • Effective process measure

    • High energy electron beam

    • Thin resist

    • Low atomic number substrate

    • Thin substrate

    • Multilayer resist processes

  • Utilize proximity correction software

    • Exposure dose modulation

    • Shape dimension adjustment technique


  • Most challenging problem in e-beam lithography pattern as a consequence of non uniform exposure in

  • The physical phenomenon of electron scattering responsible for proximity effect.

  • There exists a trade-off in proximity effect correction between speed, complexity and accuracy.

Conclusion


References
References pattern as a consequence of non uniform exposure in

  • Chang, T. H. P. (1975). "Proximity effect in electron-beam lithography." Journal of Vacuum Science and Technology12(6): 1271-1275.

  • Browne, M. T., P. Charalambous and V. A. Kudryashov (1991). "The proximity effect in electron beam nanolithography." Microelectronic Engineering13(1–4): 221-224.

  • Mark A. McCord and Michael J. Rooks. Electron beam lithography. In P. RaiChoudhury, editor, Handbook of Microlithography, Micromachining, and Microfabrica-tion, volume 1, chapter 2. SPIE Optical Engineering Press, London, 1997.


Thank you pattern as a consequence of non uniform exposure in


ad