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ITRS Public Conference Emerging Research Devices Preparations for 2009 ERD Chapter Re-write

ITRS Public Conference Emerging Research Devices Preparations for 2009 ERD Chapter Re-write. Agenda Emerging Research Technology Workshops (ERD/ERM) Carbon-based Nanoelectronics Highlight Korea ERD. Jim Hutchby – SRC U-In Chung - Samsung December 9, 2008.

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ITRS Public Conference Emerging Research Devices Preparations for 2009 ERD Chapter Re-write

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  1. ITRS Public ConferenceEmerging Research Devices Preparations for 2009 ERD Chapter Re-write Agenda Emerging Research Technology Workshops (ERD/ERM) Carbon-based Nanoelectronics Highlight Korea ERD Jim Hutchby – SRC U-In Chung - Samsung December 9, 2008

  2. Emerging Research Devices Working Group • Atsuhiro Kinoshita Toshiba • Dae-Hong Ko Yonsei U. • Hiroshi Kotaki Sharp • Atsuhiro Kinoshita Toshiba • Atsuhiro Kinoshita Toshiba • Franz Kreupl Qimonda • Nety Krishna AMAT • Zoran Krivokapic AMD • Phil Kuekes HP • Jong-Ho Lee Kyungpook Nation U. • Lou Lome IDA • Hiroshi Mizuta U. Southampton • Murali Muraldihar Freescale • Fumiyuki Nihei NEC • Ferdinand Peper NICT • Yaw Obeng NIST • Dave Roberts Air Products • Kaushal Singh AMAT • Sadas Shankar Intel • Satoshi Sugahara Tokyo Tech • Shin-ichi Takagi U. Tokyo • Ken Uchida Toshiba • Yasuo Wada Toyo U. • Rainer Waser RWTH A • Franz Widdershoven NXP • Jeff Welser NRI/IBM • Philip Wong Stanford U. • Kojiro Yagami Sony • David Yeh SRC/TI • In-Seok Yeo Samsung • In-K Yoo SAIT • Peter Zeitzoff Freescale • Yuegang Zhang LLLab • Victor Zhirnov SRC • Hiroyugi Akinaga AIST • Tetsuya Asai Hokkaido U. • Yuji Awano Fujitsu • George Bourianoff Intel • Michel Brillouet CEA/LETI • Joe Brewer U. Florida • John Carruthers PSU • Ralph Cavin SRC • U-In Chung Samsung • Byung Jin Cho KAIST • Sung Woong Chung Hynix • Shamik Das Mitre • Erik DeBenedictis SNL • Simon Deleonibus LETI • Kristin De Meyer IMEC • Michael Frank AMD • Christian Gamrat CEA • Mike Garner Intel • Dan Hammerstrom PSU • Wilfried Haensch IBM • Tsuyoshi Hasegawa NIMS • Shigenori Hayashi Matsushita • Dan Herr SRC • Toshiro Hiramoto U. Tokyo • Matsuo Hidaka ISTEK • Jim Hutchby SRC • Adrian Ionescu ETH • Kohei Itoh Keio U. • Kiyoshi Kawabata Renesas Tech • Seiichiro Kawamura Selete • Rick Kiehl U. Minn • Suhwan Kim Seoul Nation U. • Hyoungjoon Kim Samsung

  3. Evolution of Extended CMOS Elements Existing technologies More Than Moore ERD-WG in Japan New technologies Beyond CMOS year

  4. Determine which, if any, current approaches to providing a “Beyond CMOS” information processing technology is/are ready for more detailed roadmapping and enhanced investment. New ERD/ERM Roadmapping Task

  5. 2008 ERD/ERM Workshops Co-sponsored by the National Science Foundation

  6. Candidate Technologies for Information Processing

  7. Nano-electro Mechanical Switches Collective Spin Devices Spin Transfer Torque Devices Atomic Switch / Electrochemical Metallization Switch Carbon-based Nanoelectronics Single Electron Transistors CMOL / Field Programmable Nanowire Interconnect (FPNI) Emerging Research DeviceTechnology Candidates Evaluated

  8. The ERD/ERM TWGs recommend to the International Roadmap Committee --- Carbon-based Nanoelectronics to include carbon nanotubes and graphene For additional resources and detailed road mapping for ITRS as promising technologies targeting commercial demonstration in the 5-10 year horizon. ERD/ERM TWG Recommendation

  9. Atomic orbital sp2 0D 1D 2D 3D Graphene Carbon Nanotubes Fullerenes (C60) Graphite p s SP2 Carbon: 0-Dimension to 3-Dimension

  10. Graphene quantum dot Band gap engineered Graphene nanoribbons FET (Manchester group) Nonconventional Devices Graphene Veselago lense Graphene psedospintronics Graphene Spintronics Son et al.Nature (07) Cheianov et al.Science (07) Trauzettel et al.Nature Phys. (07) Graphene Electronics: Conventional & Non-conventional Conventional Devices

  11. Isd (mA) -1.2 -0.8 -0.4 0 Vsd (V) Schottky barrier switching Ph. Avouris et al, Nature Nanotechnology 2, 605 (2007) Nanotube FET Band gap: 0.5 – 1 eV On-off ratio: ~ 106 Mobility: ~ 100,000 cm2/Vsec @RT Ballistic @RT ~ 300-500 nm Fermi velocity: 106 m/sec Max current density > 109 A/cm2

  12. For scaled CMOS, potentially can .. Impact geometric scaling by providing an alternate MOSFET structure, and Provide a high mobility, high carrier velocity, MOSFET channel replacement material. AdvantagesCarbon-based Nanoelectronics --- For a new information process technology, potentially can … • Leverage R & D for CMOS (above) to … • Provide a technology platform enabling a new “Beyond CMOS” information processing paradigm

  13. The intent of this recommendation is to highlight Carbon-based Nanoelectronics for additional roadmapping and investment --- Carbon-based Nanoelectronics while sustaining exploration of other candidate approaches for “Beyond CMOS” information processing technology.

  14. Prepared for the 2009 ERD Chapter re-write Conducting six workshops in collaboration with NSF, SRC, and ERM (Five accomplished) Evaluate technology entries for 2009 Respond to IRC request (see next bullet) Responded to IRC request to identify one or more Beyond CMOS technologies for roadmapping and enhanced investment Conducted in-depth evaluation of seven Beyond CMOS technologies (including one device architecture) Recommended Carbon-based Nanoelectronics to IRC Summary

  15. International Emerging Research Devices (ERD) Work Group Emerging Research Device Work Groups Korea ERD WG US ERD WG Japan ERD WG European ERD WG Dr. U-In Chung

  16. ITRS ERD/ERM in KOREA December 9th2008 U-In Chung, Samsung

  17. ERD/ERM Organization & Member KSIA IRC : Joo-Tae Moon (samsung) Jae-Sung Roh (Hynix) Yoon-Jong Lee (Dongbu) Korea TWGs ERD(ERM) WG

  18. Relations in between organization [INC] [ITRS] KSIA COSAR R&D Promotion TWG of Korea ERD/ERM WG (U-in Jung) INC (Jin-ho Ahn) Member

  19. Key Direction(1) • Maintaining relationship between ITRS, INC and National Projects • by sharing working group members KSIA / COSAR ERD(ERM) WG INC WG Sharing WG members National Projects Leaders 2. Active interaction with ITRS ERD members through ITWG activities and forums : Working on 2009 ERD/ERM edition.

  20. Key Direction(2) 3. Regional interests ; a. Emerging Research memory : Narrowing ~10nm memory candidates

  21. Key Direction(3) 3. Regional interest ; b. Emerging Research Device : - GaAs and Ge in ERD - Focus on Energy effective devices (ex. BTBTdevices) c. Emerging Research Architectures : - Focus on 3D Architectures ( CMOL, Molecular (oxide) switch bar ) d. Emerging Research Materials : - Will work with Korean TWIGs such as Interconnect, PKG - Too much focus on Devise, Focus on Material for memory - Many forums on memory materials for MLC and 3 D

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