1 / 10

Weekly Group Meeting Report

Weekly Group Meeting Report. Renjie Chen Supervisor: Prof. Shadi A. Dayeh. Summary.

viho
Download Presentation

Weekly Group Meeting Report

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript

  1. Weekly Group Meeting Report Renjie Chen Supervisor: Prof. Shadi A. Dayeh

  2. Summary • Startingfromearlylastweek, I was workingontheNi-InGaAs diffusion study.ThereareseveralproblemsfacedwhenIstarttorepeattheprocess:failureofbonding,HSQwritingconditionchanges,andCl-ICPetchingconditionshift. • My target was to: (1) Startwith3setofnewsamples,makethebondingwork (2) DosetestforFinwritingwithHSQ (3) ModifyCl-ICPetchingcondition

  3. ProcessofNi-InGaAsStudy Process 1st EBL - Markers 2nd EBL – Ni lines 3rd EBL – Fin Plan Diffusion

  4. Dose Test for HSQ Recipe • SurfaceCleaning:DipinCD30,10min • Spin-coating:6000rpm (2000rpm/s), 60s • Bake: 80’C for 4min • Developing: 80’C (measured to be 50’C) HDMS for 30s Test parameters: • Writing Dosage: 750, 1000, 1250, 1500, 1750, 2000 uC/cm2 • Directly on InGaAs surface & on Ni lines • One & two layers writing on Ni lines for protection • Room temperature & 80’C developing Results: • No much difference of writing on Ni lines or directly on InGaAs • 1750 uC/cm2 is good for one layer writing, 1250 uC/cm2for 2 layers • Room temperature development gives more residuals • Current resolution of HSQ fin width ~ 28 nm

  5. 750 uC/cm2 1 layer lines on Ni 750 uC/cm2 2 layer lines on Ni 1000 uC/cm2 1 layer lines on Ni 1000 uC/cm2 2 layer lines on Ni

  6. 1250 uC/cm2 1 layer lines on Ni 1250 uC/cm2 2 layer lines on Ni 1500 uC/cm2 1 layer lines on Ni 1500 uC/cm2 2 layer lines on Ni

  7. 1750 uC/cm2 1 layer lines on Ni 1750 uC/cm2 2 layer lines on Ni 2000 uC/cm2 1 layer lines on Ni 2000 uC/cm2 2 layer lines on Ni

  8. Cl-ICP Etching Recipe • Chamber Cleaning: 20min O2 plasma at 200W • Etching condition: 4 mTorr, ICP/RIE=230/30 W, Cl2/N2=2/20 sccm • Etching time:105 s ICP/RIE=230/30 W ICP/RIE=230/50 W

  9. Plan • Continue to finish the fabrication of the new set of Ni-InGaAs samples -- EBL writing for Fin layer, followed by InGaAs dry etching and surface smoothing -- RTA will be perform at two temperature and different time interval for these 12 samples -- AFM will be used to measure the surface profile of the reacted Ni-InGaAs -- Measure & plot the nickelide length with different fin width and reaction time • For achieving sub-10nm lines with HSQ -- Mode 6 (lens 5) writing, writing filed will be 60um x 60um -- dilute HSQ with MIBK • Fabricate the new set of neural probe samples with Ti/Ni/Ti/Ni metal stacking -- Ti/Ni/Ti/Ni = 20/200/30/50 ?

  10. Thank youQ&A

More Related