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## PowerPoint Slideshow about ' Electronic Noise Spectroscopy of InGaAs QDs' - varsha

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Presentation Transcript

Outline

Motivation

Noise Theory

Experimental Techniques

Discussion & Results

Conclusions

Noise in QDs 7.23.08

Quantum Dot Devices

Infrared Detectors

cqd.eecs.northwestern.edu

Single Photon Emitter

byz.org

QD Laser

Biosensors

Igor L. Medintz, et. al. Nature Materials 2003

Noise in QDs 7.23.08

The Nature of Noise in QDs

What is the source of noise in QDs?

Does noise in QDs differ from bulk?

Is there a correlation of noise, defects and QDs?

Noise in QDs 7.23.08

The Plan

Noise Spectroscopy Noise Measurements

Hall Effect Carrier Conc. & Mobility

Photoluminescence Electronic structure

AFM Morphology

MBE Growth In0.35Ga0.65As QDs

Noise Spectroscopy of QDs

Noise Spectroscopy

Vnoise

Vbias

SV is the average change in voltage squared in a bandwidth of 1 Hz.

Noise in QDs 7.23.08

Flicker noise

Arises from both carrier and mobility fluctuations in the conductivity.

The Hooge Parameter (α) is an indicator of crystal quality.

Noise in QDs 7.23.08

Why 1/f Dependence?

Tail States (Defects)

Sum the noise of all the tail states together.

Noise in QDs 7.23.08

Generation-Recombination Noise

Show picture with deep trap in compared to tail states

Noise in QDs 7.23.08

Total Noise

- Noise is a useful signal
- Probe defects within the sample that cannot otherwise be detected
- Tells us about crystal quality
- Used to calibrate the resistance of a material

Measured Spectra

Noise in QDs 7.23.08

The Structure

1500 Å GaAs: Si ND = 6 × 1016

200 Å GaAs: undoped

InGaAs QD layer

200 Å GaAs: undoped

5000 Å GaAs: Si ND = 6 × 1016

5000 Å GaAs buffer

GaAs (001) SI

RHEED

Sample

# MLs

Bulk

S1

0

QW

S2

6

QDs

S3

9

QDs

S4

11

QDs

S5

13

Noise in QDs 7.23.08

Morphology

9 ML

Height: 33 ± 2.8 Å

Density: 3.8 × 1010 cm-2

11 ML

Height: 47 ± 2.8 Å

Density: 8.4 × 1010 cm-2

13 ML

Height: 53 ± 2.8 Å

Density: 7.2 × 1010 cm-2

Noise in QDs 7.23.08

Hall Measurements

Hall Measurements

Mobility

Carrier concentration

Resistance measurements

Noise in QDs 7.23.08

Mobility

Noise in QDs 7.23.08

Carrier Concentration

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DLNS: Setup & Experiments

- Setup
- Shielded sample
- Power supply: battery pack and series of resistors
- Low noise preamplifier with band filter
- Noise spectrum analyzer
- Experiments
- Temperature dependence: 82 K – 390 K, fixed bias
- Room temperature: several biases
- Low temperature (82 K): several biases

Noise in QDs 7.23.08

Noise Curves

0 ML

300 K

- Series of spectra at fixed temperatures and various biases
- Fit each specturm with all components of noise
- Extract fit parameters for component breakdown analysis

Noise in QDs 7.23.08

Flicker Noise

0 ML Sample at 300 K

- Fit Parameter:
- Determine the Hooge Parameter at 300 K and 82 K

Noise in QDs 7.23.08

GR Analysis

- A different expression:
- Peaks reveal the activation and ionization energy
- ln Smax vs ln ω ionization energy
- 1/kBTmax vs ln ω activation energy
- Capture cross section:
- Trap density:

Noise in QDs 7.23.08

GR Summary

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Conclusions

Sources of Noise in QDs

GR Traps with activation energies of 0.74, 0.49, 0.34, 0.18 and 0.1 eV

Tail states from crystal imperfections

Noise in QDs does differ from bulk

Flicker noise decreases with the insertion of In0.35Ga0.65As and the formation of QDs

Flicker noise decreases with increase of height and density

Additional GR Trap in QD samples not present in bulk

Correlation of noise, defects and QDs

GR traps give rise to GR Noise

QDs lowers flicker noise

Noise in QDs 7.23.08

Future Work

Study Gated QD samples

Change where current flows to determine which layer noise arises from

Study QDs with vertical biasing

Vary doping to change Fermi level

Enhance noise when in resonance with traps

Inject minority carriers with light into QD samples

Determine energy positions relative to conduction band

QDIPs

Look at noise in a QD device and show its detection limit because of the noise

Noise in QDs 7.23.08

What is a Quantum Dot?

Single Atom

Many Atoms

A Few Atoms Confined

- Single atom: Discrete energy level transitions
- Many atoms: continuum of energy levels
- A Few Atoms Confined: lower energy levels discrete because of confinement

~30 nm

Noise in QDs 7.23.08

QD Formation

InGaAs fluxes

When critical thickness is reached, the strain is relaxed and thus 3D islands (quantum dots) are formed.

- I’m now happy!!

Strain has built up!

- I’m very uncomfortable!!

2D InGaAs wetting layer

GaAs substrate

Used with permission of Jihoon Lee

Noise in QDs 7.23.08

Photoluminescence

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Hall Effect

- Transport Info
- Mobility
- Carrier
- Concentration
- Hall Coefficient
- Conductivity
- Primary Carrier

Noise in QDs 7.23.08

Contact Optimization

lT

c

c

AuGe/Ni/Au

d

rs

Rs

Rs

dx

Dopant

0

-l

x

- Annealing: minimize barrier to create Ohmic contacts
- IV Testing: Verify Ohmic contacts made
- TLM Measurements: determine contact resistance

Noise in QDs 7.23.08

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