neutron induced multiple bit upset
Download
Skip this Video
Download Presentation
Neutron-Induced Multiple-Bit Upset

Loading in 2 Seconds...

play fullscreen
1 / 20

Neutron-Induced Multiple-Bit Upset - PowerPoint PPT Presentation


  • 146 Views
  • Uploaded on

Neutron-Induced Multiple-Bit Upset. Alan D. Tipton 1 , Jonathan A. Pellish 1 , Patrick R. Fleming 1 , Ronald D. Schrimpf 1,2 , Robert A. Reed 2 , Robert A. Weller 1,2 , Marcus H. Mendenhall 3. Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville,TN

loader
I am the owner, or an agent authorized to act on behalf of the owner, of the copyrighted work described.
capcha
Download Presentation

PowerPoint Slideshow about ' Neutron-Induced Multiple-Bit Upset' - uriel


An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -
Presentation Transcript
neutron induced multiple bit upset

Neutron-Induced Multiple-Bit Upset

Alan D. Tipton1, Jonathan A. Pellish1,

Patrick R. Fleming1, Ronald D. Schrimpf1,2,

Robert A. Reed2, Robert A. Weller1,2,

Marcus H. Mendenhall3

  • Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville,TN
  • Vanderbilt University, Institute for Space and Defense Electronics, Nashville, TN
  • Vanderbilt University, W. M. Keck Free Electron Laser Center, Nashville, TN

[email protected]

update
Objective

Model multiple-bit upset for 90 nm CMOS technology

Calibrate to experimental neutron data

Status

Device description created

Simulation is good agreement with experimental data

Results overview

MBU for neutron irradiation exhibits an angle dependence

MBU for neutron irradiation exhibits frontside/backside dependence

Future work

Begin modeling of 65 nm technology

Characterize impact of angular dependence on error rate

Update

[email protected]

outline
Outline
  • Background
    • Multiple-bit upset (MBU)
    • Neutron-induced MBU
  • Modeling
    • Monte-Carlo Radiative Energy Deposition (MRED)
  • Results
    • Single-bit
    • Multiple-bit
  • Conclusion
  • Future work

[email protected]

outline1
Outline
  • Background
    • Multiple-bit upset (MBU)
    • Neutron-induced MBU
  • Modeling
    • Monte-Carlo Radiative Energy Deposition (MRED)
  • Results
    • Single-bit
    • Multiple-bit
  • Conclusion
  • Future work

[email protected]

multiple bit upset increases with scaling
Multiple-bit upset increases with scaling
  • Reliability
    • Memory design
    • Testing
  • Multiple-bit upset (MBU) has been shown to increase for smaller technologies
  • Feature size small relative to radiation events

Nucleon-Induced MBU

Maiz et al.

Tosaka et al.

Kawakami et al.

Hubert et al.

from Seifert, et al., Intel.IRPS, 2006.

[email protected]

neutrons induce nuclear reactions
Neutrons induce nuclear reactions

Incident Neutron

  • Neutron-induced nuclear reactions
  • Secondary products are ionizing particles that induce soft errors

Nuclear Reaction

Heavy-Ion

Sensitive

Nodes

[email protected]

outline2
Outline
  • Background
    • Multiple-bit upset (MBU)
    • Neutron-induced MBU
  • Modeling
    • Monte-Carlo Radiative Energy Deposition (MRED)
  • Results
    • Single-bit
    • Multiple-bit
  • Conclusion
  • Future work

[email protected]

slide8

Modeling methodology

  • 90 nm SRAM model
  • Sensitive node
    • Charge collection volume
  • Technology Computer Aided Design (TCAD) Model
  • Simulation - MRED (Monte-Carlo Radiative Energy Deposition) Code
  • Energy deposition cross section - ED(E)
  • Multiple node cross section - M(E)

Sensitive

Node

Metallization

Neutron

Spectrum

TCAD

MRED

ED(E)

M(E)

[email protected]

mred irradiated the tcad device
MRED irradiated the TCAD device
  • TCAD structure created from layout and process information for a 90 nm SRAM
  • Device imported into MRED and simulated using Los Alamos Neutron Lab (LANL) WNR beam line neutron spectrum

Copper lines

Tungsten vias

Single Cell

Silicon bulk

[email protected]

lanl neutron beam
LANL neutron beam
  • WNR beam spectrum imported into MRED
  • Fluence comparable to cosmic-ray neutron fluence

B. E. Takala, “The ICE House: Neutron Testing Leads to More Reliable Electronics,” Los Alamos Science, 30 November 2006.

[email protected]

mred simulates ionization and nuclear processes
MRED simulates ionization and nuclear processes
  • MRED tracks energy deposition through all layers
  • Energy deposition at each sensitive node is calculated

Sensitive

Nodes

Cell Array

n+Si

C+3n+2p++3

[email protected]

outline3
Outline
  • Background
    • Multiple-bit upset (MBU)
    • Neutron-induced MBU
  • Modeling
    • Monte-Carlo Radiative Energy Deposition (MRED)
  • Results
    • Single-bit
    • Multiple-bit
  • Conclusion
  • Future work

[email protected]

slide13

Energy deposition cross section

  • ED(E)Cross section to deposit at least E in the sensitive volume
  • Relationship to SEU cross section

SEU = ED (Qcrit)

Charge Generated (fC)

Energy Deposited (MeV)

[email protected]

single volume energy deposition

45°

90°

Single volume energy deposition
  • ED(E) is the corresponding cross section to deposit energy E or greater in a single sensitive volume
  • Exhibits a slight angle dependence
    • Shape of sensitive volume

Charge Generated (fC)

Energy Deposited (MeV)

[email protected]

frontside vs backside
Frontside vs backside
  • Backside shows increased cross section

[email protected]

multiple volume energy deposition

45°

90°

Multiple volume energy deposition
  • MBU  2 or more physically adjacent bits
  • M(E) is the corresponding cross section to deposit energy E or greater in multiple volumes
  • Exhibits a slight angle dependence
    • Cell spacing
    • Kinematics of reaction products

Charge Generated (fC)

Energy Deposited (MeV)

[email protected]

multiple bit multiplicity
Multiple bit multiplicity
  • MBU characterized for bit multiplicity
  • Probability of an event decreases with increasing multiplicity

#Events(multiplicity)

fluence

[email protected]

the fraction of mbu exhibits an angle dependence
The fraction of MBU exhibits an angle dependence
  • Fraction of MBU 

(# of MBU events)

(# of upset bits)

  • Fraction of MBU increases for neutrons at grazing angles
  • Testing and error calculations must account for angular dependencies

[email protected]

conclusion
Conclusion
  • Multiple-bit upset is increasing for highly-scaled devices
  • Neutron irradiation has been modeled using MRED for a 90 nm CMOS technology
  • Cross section differs between frontside and backside irradiation
  • Fraction of MBU exhibits an angle dependence for neutron irradiation
    • Fraction increases at grazing angles
    • Neutron testing must account for these dependencies

[email protected]

future work
Future work
  • Finish 90 nm work and publish findings
    • Model 90 nm experimental neutron data
  • Begin work on 65 nm technology
    • Create process and design based model
    • Proton and heavy-ion testing Fall/Winter 2007
    • Examine impact of angular dependence on error rate

[email protected]

ad