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Hybridization studies at Fermilab

Hybridization studies at Fermilab. Prototype detectors Readout chip mated to sensor Experiences with both single dies and 4” and 6” wafers using Indium 2 5-chip modules mated at AIT Dummies Large scale studies using daisy-chained patterns

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Hybridization studies at Fermilab

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  1. Hybridization studies at Fermilab • Prototype detectors • Readout chip mated to sensor • Experiences with both single dies and 4” and 6” wafers using Indium • 2 5-chip modules mated at AIT • Dummies • Large scale studies using daisy-chained patterns • Process characterization, yield determination, working with industry to find out the problems and establish quality control procedure • Indium, Eutectic Pb/Sn solder treated with flux or PADS(Plasma assisted fluxless soldering)

  2. Vendor search • A lot of enquiries/contacts but most companies are not interested or consider the job too challenging • Prototyping – BOEING, AIT (both used indium and could do wafer or single dies) • Dummies • AIT (indium at 30 mm pitch) • AIT also tested wafer bumping with 200 mm thick wafers • MCNC/Unitive (solder both flux and fluxless); only 6” wafers (needs modification for 4”).

  3. Bump Bonding Technologies • Indium Bumps • Fabrication process (evaporation) • Minimum achievable bump size and pitch • Properties (electrical and mechanical) • Bumping and flip-chip bonding yields • Solder Bumps • Fabrication process (electroplating) • Minimum achievable bump size and pitch • Properties (electrical and mechanical)

  4. Indium Bumps • Fabricated by thermal evaporation (using a lift-off process) for small bumps, finer pitch, better uniformity and control, single die bumping possible • Requires sputter deposited 2-metal layer barrier diffusion UBM • Soft compliant bump with a melting point of 156°C • Form a non-conducting oxide layer (which has to be penetrated) • Both sides have to be indium bumped • Minimum bump sizes of 12 µm with a height of 8-10 µm on a 18 µm pitch • Large arrays with 500K+ bumps on a single die possible • Flip-chip bonding using compression only (room temperature process) requiring ~1-2 grams/bump • Bump resistance of ~1-2 Ohms for a 15 µm x 15 µm square bump • Requires a flip-chip bonder with 1-2 micron alignment accuracy and planarization • Expensive to fabricate!

  5. Indium bumps on ROC done at AIT

  6. Results on Indium-bumped (AIT) prototype detectors Hit-map for three FPIX1-implemented detectors using radioactive source

  7. Indium Bumps Summary • Indium bump/bonding is proven, able to fabricate small bumps on fine pitch (by evaporation) with good mechanical strength and high-yields for both bumping and bonding • Indium bonding requires bumps on both sides and a highly accurate flip-chip aligner/bonder with planarization capability • Indium bumps are expensive to fabricate! • Current achievable minimum bump dimensions of 12 µm diameter, height of 8-10 µm, 18 µm pitch

  8. Electroplated Lead-Tin Solder Bumps • Versatile in selection of solder alloy composition and MP • Self-aligning and self-planarizing bumps (upon reflow) • Requires fabrication of solder bump on one side only with an opposing "wettable" pad • Excellent electrical and mechanical characteristics: • low resistance electrical path (2-3 µOhms) • low inductance (~0.1 nH) • shear values in excess of 30 grams for 50 micron bump • Alpha particle emission from bumps • Potential for low-cost in high volume • Minimum size of 15 µm diameter bumps on a 20 µm pitch!

  9. Eutectic Lead-Tin (37:63) BumpsAfter Reflow @ 215°C 25 micron diameter, 50 micron pitch

  10. Tests on dummies from MCNC/Unitive • Structures with 50 mm pitch (BTeV) and 150 mm pitch(CMS) on same wafer • 80 PADS single-chip assemblies and 38 fluxed single-chip assemblies (BTeV) • US-CMS also tested 5 double-chip assemblies and 1 5-chip assembly (using flux-less solder) • Check connectivity between matched pair of pads using a semi-automatic probe station • Sometimes, need to apply a low voltage to break through • Also look for shorts between neighbors

  11. Wafer layout

  12. Solder bumps from MCNC

  13. Results on connectivity • Much better results in the PADS assemblies than the ones using flux. The latter ones have a lot of visible residues • Concentrate only on PADS assemblies • 6 out of 71 assemblies have a lot of opens due to operator error. Assembly yield is 65/71 or 91.5% • 190 traces per assembly. 52 opens. Trace yield =99.58% • 26 bonds per trace. Bump yield =99.98% • Preliminary results from CMS module assemblies are comparable.

  14. Problems • Operator error – gross misalignment by one column • Channels need voltage to break through –thought to be due to incomplete removal of oxide on Al before UBM was put on • Bridges (see X ray picture) • Irregular reflow • Lab vs cleanroom condition • Module assembly –PADS process needs modification

  15. Defect joint

  16. Solder Bumps Summary • Solder bumps may provide an alternative to indium bump/bonding • Versatile in choice of alloy with MP between 150-210°C • Current minimum achievable bump sizes of 15 µm diameter on a 20 µm pitch! • Excellent electrical and mechanical characteristics • Self-aligning and self-planarizing bonding process • Lower fabrication cost than indium requiring bumping on one side only and a wettable layer on the other

  17. Conclusions • Satisfactory results on real detectors using Indium • Dummy tests on 30mm ongoing • Fluxless solder by MCNC has good bond yield • Whole chip losses need to be better understood and controlled • Module assembly – non-industrial standard (closely abutted to one another); MCNC needs to learn how to do this • Next round – real detectors will be bumped and bonded at MCNC

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