Preliminary l2 sensors irradiation results wbs 1 1 1
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Preliminary L2 sensors irradiation results WBS 1.1.1. Regina Demina Kansas State University. Irradiation at KSU JRM. Facility: James R Macdonald lab at KSU 5-15 MeV proton beam Beam swept by electrostatic deflector for uniform irradiation can vary intensity to receive up to 1 Mrad/hour

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Preliminary L2 sensors irradiation results WBS 1.1.1

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Preliminary l2 sensors irradiation results wbs 1 1 1

Preliminary L2 sensors irradiation resultsWBS 1.1.1

Regina Demina

Kansas State University


Irradiation at ksu jrm

Irradiation at KSU JRM

Facility: James R Macdonald lab at KSU

  • 5-15 MeV proton beam

  • Beam swept by electrostatic deflector for uniform irradiation

  • can vary intensity to receive up to 1 Mrad/hour

  • Sensors are held in vacuum chamber

  • Flux is measured by a Faraday cup.

  • Probing facility

    • Cold chuck – to 0oC

  • Target chamber


    Requirements for silicon sensors

    Requirements for silicon sensors

    • Main challenge for silicon sensors - radiation

      • Depletion voltage (F)

      • Leakage current (F)  noise

    • Doses comparable to LHC – use their R&D

    • NB: Uncertainty in F estimate– conservative approach

    10 years of CMS at inner radius


    L2 preliminary results

    L2 preliminary results

    For L2 20 fb-1  26 E12 1 Mev n/cm2

    Point of inversion ~ 90 E12 n/cm2


    L2 preliminary results1

    L2 preliminary results

    For L2 20 fb-1  26 E12 1 Mev n/cm2

    Alpha from this result ~1.2E-17A/cm, Frank used 3 in his estimates


    Some break down seen after irradiation

    Some break down seen after irradiation

    • Vbreak = ~550 V

    • After 1.2 E14 n/cm2


    Summary

    Summary

    • I don’t think we have any problems with L2 sensors


    Depletion voltage

    Spec L0, L1 Vbreak>700 V

    Spec L2-5 Vbreak>350 V

    Depletion voltage

    Specification on breakdown voltage derived based on depletion voltage evolution

    T=-10oC

    with warm up periods

    Hamburg model

    =20fb-1


    Signal to noise ratio

    Signal to noise ratio

    • Noise contributions:

      • Capacitive load: 450+43C(pF)

      • Al strip resistance + analogue cables (L0)

      • Shot noise Ileak=I0+aFAd (a=3E-17A/cm)

      • Thermal noise in Rbias

    Ileak=16mA/cm2

    Goal: S/N> 10

    Possible if

    T<-10oC for L0 and L1

    T<-5oC for L2 – L5

    Important to test Ileak after irradiation on prototype sensors and on test structures during production


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