Slide1 l.jpg
This presentation is the property of its rightful owner.
Sponsored Links
1 / 20

Thermally Induced Stress in a Glass-Silicon Bonded MEMS Micro-Structure A Finite Element Analysis ( FEA ) using flexPDE PowerPoint PPT Presentation


  • 246 Views
  • Uploaded on
  • Presentation posted in: General

Thermally Induced Stress in a Glass-Silicon Bonded MEMS Micro-Structure A Finite Element Analysis ( FEA ) using flexPDE. Craig E. Nelson - Consultant Engineer. The purpose of this numerical experiment is to learn about the field distribution of stress and strain in a MEMS microstructure.

Download Presentation

Thermally Induced Stress in a Glass-Silicon Bonded MEMS Micro-Structure A Finite Element Analysis ( FEA ) using flexPDE

An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -

Presentation Transcript


Slide1 l.jpg

Thermally Induced Stress in a Glass-Silicon Bonded MEMS Micro-Structure

A Finite Element Analysis ( FEA ) using flexPDE

Craig E. Nelson - Consultant Engineer


Slide2 l.jpg

The purpose of this numerical experiment is to learn about the field distribution of stress and strain in a MEMS microstructure.

This knowledge helps the engineer to better understand the stress on a bond line as will occur when anodic bonding of glass and silicon is attempted.

In this model, a high bonding temperature is impressed on all parts which subsequently cool to room temperature. As the material cools, it shrinks differing amounts in different materials and in different places within a given material, thus “freezing in” stress that, unless relieved, will exist for the life of the bonded part.

Depending on circumstances, the bond line may be sufficiently stressed to fail during the cooling process.


Slide3 l.jpg

Silicon Wafer

Anodic Bond Line

Glass

Silicon Wafer

Anodic Bond Line

Model Geometry


Slide4 l.jpg

Shrinkage

Shrinkage

Strained Structure – Shrinkage is Greatly Magnified


Slide5 l.jpg

Temperature Gradient During Cooling


Slide6 l.jpg

Strain Distribution Field – Horizontal Direction


Slide7 l.jpg

Strain Distribution Field – Vertical Direction


Slide8 l.jpg

Strain Distribution Field – Vector Plot


Slide9 l.jpg

Stress Distribution Field – Horizontal Direction


Slide10 l.jpg

Stress Distribution Field – Vertical Direction


Slide11 l.jpg

Shear Stress Distribution Field


Slide12 l.jpg

Stress Distribution Field – Tension


Slide13 l.jpg

Principal Stress Distribution Field – Horizontal Component


Slide14 l.jpg

Principal Stress Distribution Field – Vertical Component


Slide15 l.jpg

Angle of Principal Stress Distribution Field


Slide16 l.jpg

Von Mises Stress Distribution Field


Slide17 l.jpg

Strain Distribution Field – Horizontal Component


Slide18 l.jpg

Stress Distribution Field – Horizontal Component


Slide19 l.jpg

Stress Distribution Field – Vertical Component


Slide20 l.jpg

Summary and Conclusions

A finite element model has been developed that allows insight into the field distribution of stress and strain in an anodic bonded glass-silicon MEMS microstructure.

This knowledge helps the engineer to better understand the stress and strain on the glass-silicon bond line and other parts of the solution domain.

The model could be further developed in many further ways.


  • Login