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Physical Motivations A Luminosity upgrade of the CERN Large Hadron Collider (LHC) PowerPoint PPT Presentation


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Materials and Processing. Wafers produced by Okmetic (Vantaa, Finland) and processed at ITC-IRST (Trento, Italy) Layout includes: 66 test structures (multigard diodes, mos, gated diodes) and 10 microstrip sensors. p-on-n MCz <100> r ~ 900 W cm - 300 m m thick processes:

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Physical Motivations A Luminosity upgrade of the CERN Large Hadron Collider (LHC)

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Physical motivations a luminosity upgrade of the cern large hadron collider lhc

Materials and Processing

Wafers produced by Okmetic (Vantaa, Finland) and processed at ITC-IRST (Trento, Italy)

Layout includes: 66 test structures (multigard diodes, mos, gated diodes) and 10 microstrip sensors

p-on-n MCz <100> r~ 900 W cm - 300mm thick

processes:

- standard

- no LTO, sintering @ 380 oC

- no LTO, sintering @ 380 oC + TD killing

n-on-p MCz, no OG <100> r~ 1.8 KW cm - 300 mm thick

n implants isolation:

- low dose p-spray 3E+12 cm -2

- high-dose p-spray 5E+12 cm -2

Fz reference samples r > 5KW cm- 200 mm thick

- n-type <111> standard and sintering @ 380 oC

- p-type like n-on-p MCz

RUN I: p-on-n 22 wafers

RUN II: n-on-p 24 wafers

Picture of a processed wafer

Testing Procedures

nMCz

  • Pre-irradiation: full

    electrical characterization of

    all structures

Irradiation

Uniform wafer resistivity (A)

Uniform Current Density (B)

  • Irradiation with 24 GeV/c protons at CERN

    - 3 fluences from 1014up to 5x1015 p/cm2

    - 90 diodes (75% p-on-n and 25% n-on-p)

  • Irradiation with 26 MeV/c protons at Karlsruhe

    - 8 fluences from 2x1013up to 3x10151 MeV n/cm2

    - 100 diodes (38% p-on-n and 62% n-on-p)

(A)

(B)

  • Post-irradiation:

    • IV and CV measurements

    • (at 0 oC or 20oC) before annealing

    • Measurements repeated after annealing steps (at 20, 60 or 80 0C) to follow the radiation damage evolution on bulk current and effective dopant concentration

    • Microscopic defect analysis: transient current analysis and TSC spectroscopy

Current related damage rate:

a= (DI/V)/ F

MCz: improved reverse annealing

Type non-inverted:depletion voltage has a maximum

(Extracted at the equivalent of 80 min annealing @ 60 0C)

F=3.82x1013 n/cm2

Maximum depletion voltage for non inverted diodes

  • Same radiation damage constant for

    p-on-n and n-on-p diodes of Fz and

    MCz silicon

  • No parameter dependence on fluence

F=4.60x1014 n/cm2

F=7.31x1013

n/cm2

Type inverted:depletion voltage has a minimum

Stable damage rate:

b= ∂DNeff/∂F

Microscopic Defect Analysis:

(Neff measured at the annealing point of min/max depletion voltage)

Improved b value with bulk oxygenation for both p-on-n and n-on-p

nFz Transient Current Analysis: SCSI+/- observed at room temperature: nFZ already type invertedat F=3x1014 p/cm2:

nMCz TSC Spectroscopy:

donor peak enhanced wrt FZ at 30 K, compensating deep acceptors: nMCz

not type inverted @F=4x1014p/cm2

Stable damage behaviour improved by Thermal Donor Killing (TDK)

TDK

MCz is radiation harder than FZ: type-inversion point at higher fluences

Radiation Hardness of High Resistivity n- and p-type Magnetic Czochralski SiliconD.Creanza, M.de Palma, N.Manna, V.Radicci (INFN and Universita` di Bari), M.Bruzzi, E.Focardi, A.Macchiolo, D.Menichelli, M.Scaringella (INFN and Universita` di Firenze), L.Borrello, A.Messineo, G.Segneri, D.Sentenac (INFN and Universita` di Pisa), M.Boscardin, G.F.Dalla Betta, C.Piemonte, S.Ronchin, N.Zorzi (ITC-IRST, Trento)

Physical Motivations

A Luminosity upgrade of the CERN Large Hadron Collider (LHC)

is already envisaged

L: 1034cm-2s-1 1035cm-2s-1

The CERN RD50 Collaboration and the INFN SMART project

within RD50 are aimed at developing new radiation hard

materials and devices for High Energy Physics experiments.

Possible Strategies:

- Oxygen enriched Silicon:

Radiation induced V2O depressed in favor of less damaging

VO or oxygen aggregates:

Diffused Oxygen Float Zone (DOFZ)

(Improved radiation hardness already shown by RD48)

Magnetic Czochralski (MCz)

(DOFZ: ~ 2x1017[O]/cm3 – MCz: ~ 5x1017[O]/cm3)

- n-on-p doped type Silicon:

- improved charge collection

- no type inversion

Results

Annealing behaviour:

Gabriele Segneri

The Seventh International Conference on Position Sensitive Detectors – September 12th – 16th 2005 – The University of Liverpool


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